Solar cell manufacturing method, solar cell, and semiconductor device manufacturing method

A technology of solar cells and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, final product manufacturing, etc., can solve problems such as inconvenience and low conversion efficiency

Active Publication Date: 2008-04-23
SHIN-ETSU HANDOTAI CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] However, according to the description of JP-A-2004-281569, this method requires two heat treatments, which is not easy.
If heat treatment is performed only once, due to autodoping, there will be a high concentration of dopants on the light-receiving surface except under the electrode, so the conversion efficiency will not be high

Method used

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  • Solar cell manufacturing method, solar cell, and semiconductor device manufacturing method
  • Solar cell manufacturing method, solar cell, and semiconductor device manufacturing method
  • Solar cell manufacturing method, solar cell, and semiconductor device manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0153] Embodiment 1, comparative example 1

[0154] Example 1, according to the process of Figure 2(a), using the CZ method, the crystal plane orientation is (100), 15cm square, 250μm thick, and the resistivity after slicing is 2Ω.cm (the dopant concentration is 7.2× 10 15 cm -3 ), gallium-doped single-crystal silicon substrate whose first conductivity type is P-type, is immersed in 40% by weight sodium hydroxide aqueous solution, and the damaged layer is etched away. Second, the substrate was wet-etched by immersing the substrate in an aqueous solution in which isopropanol was added to 3% by weight of sodium hydroxide to form random textures on the surface.

[0155] Then, after the substrate is cleaned, the diffusion paste containing phosphoric acid and silica gel is printed and coated on the light-receiving surface of the substrate with a screen printing machine. The printed pattern at this time was a linear pattern with a pitch of 2 mm and a width of 150 μm. The printed...

Embodiment 2

[0165] Embodiment 2 A solar cell is manufactured by various two-stage emitter manufacturing methods of the present invention. Table 2 shows the sheet resistances of the high-concentration layer and the low-concentration layer formed at this time. The characteristics of those solar cells are combined in Table 3.

[0166] As shown in Table 2, in order to form two kinds of concentration diffusion layers in the same plane by the coating diffusion method, this embodiment utilizes the dopant content contained in the coating agent, coating thickness, glass content (silicon compound content ), elements, etc. In particular, changes in viscosity or grooves were used for changes in coating thickness.

[0167] The method for making the two-stage emitter is briefly described below. In addition, a series of processes from formation of texture, diffusion to formation of electrodes are the same as those in Embodiment 1.

[0168] First, for samples A, C, D, and E, by changing the items sho...

Embodiment 3

[0176] Solar cells were manufactured according to the processes of treatments A and B shown in FIG. 5 . Except for the etch-back and surface oxidation of the surface of the diffusion layer, other manufacturing conditions are the same as in Example 1. At this time, etch back is performed after heat treatment, that is, the substrate is immersed in an ammonia / hydrogen peroxide aqueous solution to etch the surface by several nanometers. On the other hand, the surface oxidation is a continuous heat treatment, and the substrate is kept in a heat treatment furnace for 10 minutes without cooling down, but only by flowing dry oxygen. Various characteristics of the solar cell obtained according to this example are shown in Table 4. Various characteristics of the solar cell of Example 1 are also shown in Table 4 for comparison. Spectral sensitivity characteristics (external quantum efficiency) are shown in FIG. 10 .

[0177] [Table 4]

[0178] open circuit voltage

(V...

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Abstract

The present invention is a method for manufacturing a solar cell by forming a p-n junction in a semiconductor substrate having a first conductivity type, wherein, at least: a first coating material containing a dopant and an agent for preventing a dopant from scattering, and a second coating material containing a dopant, are coated on the semiconductor substrate having the first conductivity type so that the second coating material may be brought into contact with at least the first coating material; and, a first diffusion layer formed by coating the first coating material, and a second diffusion layer formed by coating the second coating material the second diffusion layer having a conductivity is lower than that of the first diffusion layer are simultaneously formed by a diffusion heat treatment; a solar cell manufactured by the method; and a method for manufacturing a semiconductor device. It is therefore possible to provide the method for manufacturing the solar cell, which can manufacture the solar cell whose photoelectric conversion efficiency is improved at low cost and with a simple and easy method by suppressing surface recombination in a portion other than an electrode of a light-receiving surface and recombination within an emitter while obtaining ohmic contact; the solar cell manufactured by the method; and the method for manufacturing the semiconductor device.

Description

technical field [0001] The invention relates to a method for manufacturing a solar cell, a method for manufacturing a solar cell and a semiconductor device, in particular to a method for manufacturing a low-cost solar cell, a method for manufacturing a solar cell and a semiconductor device. Background technique [0002] Nowadays, cost reduction is an important issue in the manufacturing method of consumer solar cells. Therefore, a method combining thermal diffusion method and screen printing method is generally used. The details thereof are described below. [0003] First, a single-crystal silicon ingot mounted on a Czochralski (CZ) farad or a polycrystalline silicon ingot produced by a casting method is sliced ​​by a wire-cut method to obtain a P-type silicon substrate. Next, after removing slice damage on the surface with an alkaline solution, fine unevenness (texture) with a maximum height of about 10 μm is formed on the surface, and then an n-type diffusion layer is for...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/04
CPCH01L31/18Y02E10/50H01L21/2254H01L31/0682Y02E10/547H01L31/022425H01L31/1804Y02P70/50H01L31/06H01L31/04
Inventor 大塚宽之高桥正俊石川直挥斋顺重德植栗豊敬生岛聪之渡部武纪赤塚武大西力
Owner SHIN-ETSU HANDOTAI CO LTD
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