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Etchant for substrates having BPSG and SOD layers

An etching solution and etching rate technology, which is applied in the manufacture of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problem of inappropriate etching solution for ultra-fine devices.

Inactive Publication Date: 2008-05-14
DAIKIN IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the inventors of the present invention have found that in the etchant composed of fluoride salt, water, and ethanol used in Patent Document 1, the selectivity ratio between the non-annealed BPSG film and the thermal oxide film produced by the low-temperature treatment Or any one or both of the selectivity ratios of the SOD film and thermal oxide film without annealing exceeds 3, so it is not suitable as an etchant for ultra-fine devices manufactured by low-temperature processing

Method used

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  • Etchant for substrates having BPSG and SOD layers

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～17 and comparative example 1～12

[0082] According to the ratio shown in Table 1, mix difluoride salt (CH 3 NH 3 ·HF 2 or (CH 3 ) 3 NH·HF 2 ), water and organic solvents with heteroatoms, prepared etching solution, for the formation of non-annealing BPSG (borophosphorous glass) film, non-annealing SOD (spin-on-coating dielectric) film, thermal oxidation film (THOX) on the silicon substrate Any one of the test substrates was used to obtain the etching rate and selectivity ratio.

[0083] The results are shown in Table 1 and Table 2.

[0084] Table 1

[0085] solvent

flash point

Fluoride salt

Amount added

water

Etching rate (100A / min)

selection ratio

Solvent name

molecular formula

(℃)

(mol / kg)

(mol / kg)

(weight%)

THOX

BPSG

SOD

BPSG /

THOX

SOD /

THOX

Example 1

THF

CH2CH2CH2CH2O

-17.2

CH3NH3HF2

0.02

...

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Abstract

The invention provides an etchant for etching the non-annealed BPSG (boron phosphosilicate glass) layer and THOX (thermal oxide) layer of a nanodevice produced by low-temperature process or the non-annealed SOD (Spin on Dielectric) layer and THOX layer thereof at equivalent rates or nearly equivalent rates; an etching process; and products of etching. Specifically, the invention provides an etchant which contains at least one salt selected from among fluoride salts and hydrogendifluoride salts and an organic solvent having a heteroatom and which exhibits etching rates of 100AA / min or below at 23 DEG C against THOX layer, non-annealed BPSG layer, and non-annealed SOD layer and etching rate ratios of non-annealed BPSG layer and non-annealed SOD layer to THOX layer of 3 or below.

Description

technical field [0001] The present invention relates to an etching solution, a method for producing an etching-treated product, and an etching-treated product obtained by the method. In more detail, it relates to non-annealing doped oxide films such as borophosphorous glass films (BPSG) and non-annealing SOD films, TEOS films, thermal oxide films (THOX) etc. An etching solution for etching a non-doped oxide film, a method for producing an etching-treated product, and an etching-treated product obtainable by the method. Background technique [0002] In the realization of ultra-fine devices, especially because it is necessary to suppress the diffusion of dopants in transistors, ultra-fine devices such as ULSI are manufactured by low-temperature processing. In the low-temperature treatment, the selectivity ratio between the BPSG film without annealing and the thermal oxide film, and the selectivity ratio between the SOD film and the thermal oxide film without annealing are all...

Claims

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Application Information

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IPC IPC(8): H01L21/306H01L21/768
CPCH01L21/31111H01L21/306H01L21/3063H01L21/768
Inventor 板野充司渡边大祐
Owner DAIKIN IND LTD
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