Low etching relative thick photoresist cleaning liquor

Abstract

The invention discloses a low-etching cleaning agent which is suitable for cleaning photoresist which is much thicker, which is characterized in that the invention comprises caustic potash, dimethyl sulfoxide, benzoic alcohol, and aminoethyl alcohol. The cleaning agent of the invention can be used for removing photo resist (light blockage) or other residues on metals, metal alloy, or dielectric substrate, which is especially suitable for cleaning the photoresist which is much thicker (the thickness is more than 100 mm), meanwhile, the invention has a lower etching speed for metals such as copper and the like. The invention has a good application prospect in the microelectron field such as the cleaning of semiconductor crystal and the like.

Description

technical field [0001] The invention relates to a low-etching cleaning solution suitable for cleaning relatively thick photoresists. Background technique [0002] In the usual semiconductor manufacturing process, a photoresist mask is formed on the surface of metals such as silicon dioxide, Cu (copper), and low-k materials, and pattern transfer is performed by wet or dry etching after exposure. In the wafer microsphere implantation process (bumping technology), a photoresist material (photoresist) is also required to form a mask, which also needs to be removed after the microspheres are successfully implanted, but due to the thicker photoresist , is often difficult to remove completely. The more common methods to improve the removal effect are to extend the soaking time, increase the soaking temperature and use more aggressive solutions, but this often causes corrosion of the wafer substrate and microspheres, resulting in a significant decrease in wafer yield. [0003] The...

AI Technical Summary

Problems solved by technology

In the wafer microsphere implantation process (bumping technology), a photoresist material (photoresist) is also required to form a mask, which also needs to be removed after the microspheres are successfully implanted, but due to the thicker photoresist , it is often difficult to completely remove

The more common methods to improve the removal effect are to extend the soaking time, increase the soaking temperature and use a more aggressive solution, but this often causes corrosion of the wafer substrate and microspheres, resulting in a significant decrease in wafer yield

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