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Nitride semiconductor device

一种氮化物半导体、元件的技术,应用在半导体器件、半导体激光器、电气元件等方向,能够解决结晶性偏差、低工作电压、低接触电阻等问题,达到发光效率提高的效果

Inactive Publication Date: 2008-05-28
NICHIA CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] However, InGaN is difficult to grow into a film with few defects and good crystallinity, and it is difficult to obtain a desired ohmic contact with sufficiently low contact resistance.
In addition, there is also a problem that the contact resistance is unstable due to the crystallinity deviation of the formed InGaN layer.
Therefore, conventional nitride semiconductor devices having a p-type contact layer made of InGaN are difficult to obtain a sufficiently low and stable operating voltage and high output power at the same time
Therefore, for example, when constituting an LED element using a contact layer made of InGaN, there is a problem that the forward voltage (Vf) at 20mA cannot be as low as 3.4V to 3.8V, and the variation is large
[0014] In addition, elements made of nitride semiconductors may deteriorate even at a voltage of 100V, which is far lower than the static electricity generated by the human body, so care must be taken when handling them.

Method used

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Embodiment approach 1

[0153] 1 is a schematic cross-sectional view showing the structure of a nitride semiconductor device (LED device) according to Embodiment 1 of the present invention. This LED element has a structure in which the following layers are sequentially stacked on a sapphire substrate 1: a first buffer layer 2 made of GaN; a second buffer layer 3 made of undoped GaN; The n-side contact layer 4 composed of; the third buffer layer 5 composed of non-doped GaN layer; the n-side multilayer film layer 6 composed of InGaN / GaN superlattice structure; the multiple quantum well composed of InGaN / GaN The active layer 7 of the structure; the p-side multilayer film layer 8 composed of AlGaN / GaN superlattice structure; the p-side contact layer 9 composed of Mg-doped GaN.

[0154] That is, the LED element of Embodiment 1 is formed on the sapphire substrate 1 by interposing the active layer 7 of the multi-quantum well structure between the n-side region 30 and the p-side region, the n-side region 30 ...

Embodiment approach 2

[0178] Next, referring to FIG. 4, a nitride semiconductor device according to Embodiment 2 of the present invention will be described.

[0179] The nitride semiconductor element of Embodiment 2 of the present invention is a light-emitting element having a double heterostructure on a substrate 1 having n-side regions 130 and The active layer 7 of the multi-quantum well structure sandwiched by the p-side region 140 .

[0180] In detail, in the nitride semiconductor device of Embodiment 2, as shown in FIG. 4, the n-side region 30 is composed of the following layers: a buffer layer 102, an undoped GaN layer 103, and an n-side region containing n-type impurities. The contact layer 4, the n-side first multilayer film layer 105 containing n-type impurities, and the n-side second multilayer film layer 6 composed of the first nitride semiconductor film 106a and the second nitride semiconductor film 106b; the p-side The region 30 is composed of the p-side cladding layer 108 formed of a...

Embodiment approach 3

[0242] Next, Embodiment 3 of the present invention will be described with reference to FIG. 5 .

[0243] As shown in FIG. 5 , the nitride semiconductor light-emitting device according to Embodiment 3 of the present invention is structured as follows: On a substrate 1 made of, for example, sapphire, a first n-side nitride semiconductor layer 203 is sequentially formed via a buffer layer 202 , The second n-side nitride semiconductor layer 204 , the third n-side nitride semiconductor layer 205 , the active layer 7 , the p-side cladding layer 108 and the p-side contact layer 208 . Further, in the third embodiment, the light-transmitting p-electrode 10 is formed on substantially the entire upper surface of the p-side contact layer 208, and the p-pad electrode 11 for bonding is formed on a part of the p-electrode. In addition, the surface of the second n-side nitride semiconductor layer 204 is exposed on one side of the light-emitting element, and the n-electrode 12 is formed on the...

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Abstract

The invention provides a nitride semiconductor device which comprises an n-region having a plurality of nitride semiconductor films, a p-region having a plurality of nitride semiconductor films, and an active layer interposed there between, and is characterized in that at least one layer of nitride semiconductor film in n-region cascades a first nitride semiconductor film containing In and a second nitride semiconductor film which has different composition with the first nitride semiconductor film to form multi-layers in n-region, and at least one of the first nitride semiconductor film or the second nitride semiconductor film has film thickness as 100 or below.

Description

[0001] The invention of this application is a divisional application of the Chinese patent application with the filing date of March 10, 1999, the application number of 99803866.0, and the title of the invention being a nitrogen compound semiconductor element. technical field [0002] The present invention relates to nitride semiconductors (for example, In x Al y Ga 1-x-y N, 0≤x, 0≤y, x+y≤1) elements. Background technique [0003] Nitride semiconductors, as materials for high-brightness blue LEDs and pure green LEDs, have been practically used in various light sources such as full-color LED displays, traffic lights, and image scanner light sources. These LED elements basically have a structure in which the following layers are sequentially stacked on a sapphire substrate: a buffer layer made of GaN, an n-side contact layer made of GaN doped with Si, and a single quantum well structure (SQW: Single Quantum Well) with InGaN. -Quantum-Well) or an active layer with an InGaN m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L31/0248H01L29/02H01S5/00H01S5/343H01S5/323H01L33/32
Inventor 谷沢公二三谷友次中河羲典高木宏典丸居宏充福田芳克池上武止
Owner NICHIA CORP
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