Method for forming vapor deposition film by using surface wave plasma, and apparatus therefor
A technology of plasma and evaporated film, which is applied in the direction of gaseous chemical plating, semiconductor/solid-state device manufacturing, coating, etc., can solve the problems of long thin film wear, discrete thickness of evaporated film, and inability to maintain uniform intervals, etc., to achieve high productivity effect
Inactive Publication Date: 2008-05-28
TOYO SEIKAN KAISHA LTD
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Problems solved by technology
For example, if the long film is moved in close contact with the microwave supply device, the wear of the long film will occur, and if the long film is moved with a small distance between the long film and the microwave supply device, Then, due to the vibration of the thin film, etc., the distance between the two cannot be maintained uniformly, and the thickness of the evaporated film will be scattered, etc.
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[0058] In the present invention, it is a method of forming a vapor-deposited film on the surface of a substrate film by a plasma reaction using surface waves of microwaves. Counter-surface deposition in which a vapor-deposited film is formed on the side of the supply device, and reverse-side deposition in which a vapor-deposited film is formed on the surface of the plastic film substrate opposite to the surface of the surface wave supply device. The principles of these methods are illustrated by Fig. 1 and Fig. 2 .
[0059] First, in FIG. 1 for explaining the principle of face-to-face vapor deposition, degassing ports 2 and 2 are formed in the chamber 1 to keep the inside of the chamber 1 at a predetermined vacuum degree. A gas supply pipe 5 connected to a gas supply source 3 is connected to a side wall of the chamber 1 to supply a predetermined reaction gas into the chamber 1 . In addition, on the upper wall of the chamber 1, a surface wave generating device generally indica...
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The vapor-deposited film forming method of the present invention is characterized in that a surface wave generating device (10) using microwaves is arranged in a vacuum region, and the plastic film substrate (13) is continuously moved to the surface wave generating device in a manner facing the surface wave generating device. in a vacuum region, and continuously supply a reaction gas containing at least an organometallic compound into the vacuum region, and perform a plasma reaction by means of a surface wave of a microwave from the surface wave generating device (10), thereby forming the above-mentioned thin film substrate (13) A vapor-deposited film is continuously formed on the surface. According to this method, a vapor-deposited film can be continuously formed on the surface of a film substrate, particularly on the surface of a long film, by microwave surface wave plasma.
Description
technical field [0001] The present invention relates to a method for forming a vapor-deposited film by surface wave plasma and an apparatus for performing the method, and more specifically, to a method and an apparatus for forming an vapor-deposited film by using a plasma CVD method using surface wave plasma. Surface wave plasma is obtained by means of microwaves. Background technique [0002] In the past, in order to improve the characteristics of various substrates, vapor-deposited films were formed on their surfaces by plasma CVD. In the field of packaging materials, it is known to form vapor-deposited films by plasma CVD on plastic substrates such as containers or films to improve Gas barrier method. For example, it is known to use an organometallic compound such as an organosilicon compound and oxygen to form a deposited film composed of a compound containing silicon oxide, carbon, silicon, and oxygen as constituent elements on the surface of a plastic substrate by pla...
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IPC IPC(8): C23C16/511
CPCC23C16/545C23C16/511H01J37/3277H01J37/32192C23C16/00H01L21/20
Inventor 山田幸司国广一郎稻垣肇仓岛秀夫
Owner TOYO SEIKAN KAISHA LTD