Vertical type bipolar transistor manufacture method and vertical type bipolar transistor

Abstract

The invention discloses a method for manufacturing technics of a bipolar transistor with vertical type and a bipolar transistor with vertical type. The method comprises the following steps: after ion implantation is carried out to obtain an intrinsic base region and a collector region which is under the intrinsic base region, a buffer layer is further deposited; the buffer layer is etched by a single-step dry method to form a side wall; a wet method is adopted to etch and wipe off the film to expose the intrinsic base region; emitter heteromorphic silicon is deposited; an emitter is obtained by chemical wet etching; then an external base is formed by using chemical wet etching again. The invention guarantees the dimensional precision of the emitter, and at the same time has a low requirement for the precision of an etching plate. The invention is simple in technics and cost-efficient.

Description

technical field [0001] The invention relates to a manufacturing process method of a semiconductor transistor device, in particular to a manufacturing process method of a vertical bipolar transistor. The invention also relates to a vertical bipolar transistor made by the method. Background technique [0002] Bipolar transistors are one of the device structures that make up modern large-scale integrated circuits. The advantages of bipolar transistors are fast operation speed, large output current per unit chip area, and small change in on-state voltage, which is suitable for making analog circuits; the disadvantages are small input resistance, large power consumption, and complicated process. [0003] There are various types of structures of bipolar transistors, for example, lateral bipolar transistors, vertical bipolar transistors (such as vertical bipolar transistors), and so on. In practical applications, more vertical bipolar transistors are generally used, but their man...

AI Technical Summary

Problems solved by technology

In practical applications, vertical bipolar transistors are generally used more, but their manufacturing technology is also more complicated than that of horizontal bipolar transistors.

The current advanced vertical bipolar transistor manufacturing process technology mainly uses two polysilicon electrodes (double-poly) and self-alignment process, but when using the above process method, the isolation between the emitter and the base is relatively difficult

There are many methods for isolating the emitter and the base in the prior art, but the process is complex and the manufacturing cost is high; and the self-alignment process requires the size of the isolation region to be kept constant, otherwise it will be difficult to precisely control the emission pole size

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