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Method for removing successive sedimentation multiplelayer films of electric charge cumulated on the substrate

A multi-layer film and charge technology, applied in coatings, circuits, electrical components, etc., can solve the problems of wafer fragmentation, high RF delay reflection power, and poor film quality, so as to improve quality, reduce charge accumulation, and avoid problems. Fragmentation effect

Inactive Publication Date: 2008-06-18
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when depositing a multi-layer film by a chemical vapor deposition process containing plasma, the charge in the process will remain on the wafer due to electrostatic adsorption, resulting in radio frequency delay (RF delay) and reflected power during the deposition of the next film layer. (reflective power) is too high, making the quality of the deposited film poor
On the other hand, it is also possible that the chip is broken when the chip is lifted by the ejector pin at the end of the deposition due to the excessive charge accumulated on the chip.

Method used

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  • Method for removing successive sedimentation multiplelayer films of electric charge cumulated on the substrate
  • Method for removing successive sedimentation multiplelayer films of electric charge cumulated on the substrate
  • Method for removing successive sedimentation multiplelayer films of electric charge cumulated on the substrate

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Embodiment Construction

[0041] The method for depositing a multilayer film of the present invention is to perform a charge removal step after the deposition of the last film layer, and / or between the deposition processes of two adjacent film layers, so as to reduce the charge accumulated on the substrate. charge. Its details are as follows.

[0042] figure 1 It is a flow chart of a method for continuously depositing a double-layer film in a plasma-containing chemical vapor deposition machine according to an embodiment of the present invention. figure 2 is a schematic cross-sectional view of a substrate with a double-layer stacked film layer according to an embodiment of the present invention.

[0043] Please refer to figure 1 and figure 2 , step 102 , firstly, a first film layer 202 is formed on the substrate 200 . The process method is to feed a reaction gas and a carrier gas into a chemical vapor camera platform containing plasma, such as a plasma-enhanced chemical vapor deposition machine o...

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Abstract

The invention relates to a method for settling a multi-layer film continuously, which carries out a charge removing process after the last film layer is settled and / or between the settling processes of two neighboring film layers. The charge removing process is to feed a noble gas into the reaction cavity of a machine and to exhaust the noble gas after a period of time.

Description

technical field [0001] The invention relates to a process method for a semiconductor element, in particular to a method for continuously depositing multilayer films in a plasma-containing chemical vapor deposition machine. Background technique [0002] The chemical vapor deposition process is a technology that introduces reactive gases into a high-temperature reaction chamber, and deposits thin films through chemical reactions between the reactive gases. The chemical vapor deposition process is a deposition method frequently used in many semiconductor processes. Chemical vapor deposition processes can include low-pressure chemical vapor deposition (LPCVD), atmospheric-pressure chemical vapor deposition (APCVD), plasma-enhanced chemical vapor deposition (PECVD), and high-density plasma chemical vapor deposition (HDPCVD), among which plasma Enhanced chemical vapor deposition process and high density plasma chemical vapor deposition process are widely used because of the low t...

Claims

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Application Information

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IPC IPC(8): H01L21/00H01L21/31C23C16/54
Inventor 姜兆声林平伟杨钦伟
Owner UNITED MICROELECTRONICS CORP