Semiconductor and producing method thereof

Abstract

The invention discloses a semiconductor device and the manufacturing method thereof. The device comprises a substrate which comprises an NMOS transistor and a PMOS transistor at least, wherein, the gate height of the PMOS transistor is lower than that of the NMOS transistor. The semiconductor device of the invention can reduce the heat budget of technological manufacture without affecting properties of the device, and the device can improve the whole property of the semiconductor device, especially, the semiconductor device is under 45nm. The manufacturing method of the semiconductor device of the invention adopts the Damascus method and forms the gate with different heights, and the method is easy to realize without great effect on production cycle.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] Semiconductor integrated circuits contain a large number of NMOS and PMOS transistors. The so-called NMOS transistors are devices that form a gate on a P-type substrate and inject N-type impurities into the substrate on both sides of the gate to form a source / drain. The channel under the gate is N-type, so it is called an N-channel metal-oxide-semiconductor structure. The so-called PMOS transistor is a device that injects P-type impurities on an N-type substrate to form a source / drain region. Because its channel is P-type, it is called a P-channel metal oxide semiconductor structure. In the manufacturing process of semiconductor devices, the manufacturing process of forming NMOS and PMOS transistors on the same substrate is as follows: [0003] Figures 1A to 1C A device...

AI Technical Summary

Problems solved by technology

[0010] The invention provides a semiconductor device and a manufacturing method thereof. The activation temperature of the activated impurity required in the manufacturing process of the semiconductor device is relatively low, which can reduce the thermal budget in production without affecting the performance of the device, and improve the performance of the present invention. There is a problem that the thermal budget and device performance cannot be considered in the manufacture of semiconductor devices below 45nm

Images