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Fabrication method of sub-wavelength micro-nano structure formed by focused lithography

A technology of micro-nano structure and manufacturing method, applied in the direction of micro-structure technology, micro-structure device, manufacturing micro-structure device, etc., can solve the problem of inability to form smaller-sized micro-nano structure, and achieve the effect of size reduction

Inactive Publication Date: 2011-12-14
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
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Problems solved by technology

[0004] The technical problem to be solved by the present invention is: Aiming at the problem that the size of the focal spot cannot be formed on the photoresist due to the limitation of the diffraction limit in the focusing lithography method, a method is proposed by improving the resolution. , reduce the size of the focal spot, and adopt the fabrication method of focusing photolithography to form sub-wavelength micro-nano structures

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  • Fabrication method of sub-wavelength micro-nano structure formed by focused lithography
  • Fabrication method of sub-wavelength micro-nano structure formed by focused lithography
  • Fabrication method of sub-wavelength micro-nano structure formed by focused lithography

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Embodiment Construction

[0031] The present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings, but the scope of protection of the present invention is not limited to the following embodiments, but should include all content in the claims, and those skilled in the art can realize the rights from the following embodiments Everything in the request.

[0032] The following examples provide the application of the method of the present invention to form sub-wavelength micro-nano structures, and the specific steps are as follows:

[0033] (1) Choose silicon dioxide SiO 2 base materials such as figure 1 shown;

[0034] (2) Spin-coat the first layer of 200nm AZ3100 resist on the substrate, such as figure 2 shown;

[0035] (3) Metal silver of 40nm is vapor-deposited again on the resist surface, as image 3 shown;

[0036] (4) The microlens array structure with a diameter of 1000um and a sagittal height of 1.54um is used to focus and expose the ...

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Abstract

The invention provides a manufacturing method for forming a sub-wavelength micro-nano structure by focusing photolithography, which is characterized in that: first, a suitable substrate material is selected; a layer of resist is spin-coated on the surface of the substrate; Then use the microlens array structure to focus and expose the structure; remove the microlens array structure to remove the metal layer structure; develop the resist to obtain the target structure; finally etch the target structure, and the structure Transfer to the substrate; the present invention uses the metal layer structure added at the bottom of the microlens to re-modulate the focused light field to further reduce the size of the focused spot, so the size of the target structure can be further reduced, as Fabrication of micro-nano structures provides a good method.

Description

technical field [0001] The invention relates to a method for manufacturing a micro-nano structure, in particular to a method for manufacturing a sub-wavelength micro-nano structure by focusing photolithography. Background technique [0002] In recent years, with the rapid development of micro-nano processing technology and nanomaterials, the electromagnetic properties of micro-nano metal structures are receiving more and more attention; the interaction of light with surface micro-nano metal structures has produced a series of new singularities. Physical phenomena, for example, in 1998, the French scientist Ebbesen and his collaborators discovered the extraordinary enhancement phenomenon (Extraordinary Optical Transmission) of the light passing through the subwavelength metal hole array; H.J.Lezec et al. When nanoholes are used, the transmittance can not only be enhanced, but also the diffraction angle of the beam is very small, and the transmission direction does not follow ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20B81C1/00
Inventor 杜春雷李淑红董小春史立芳
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI