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Thin film transistor for liquid crystal display device

A technology of thin film transistors and insulators, applied in transistors, electric solid state devices, semiconductor devices, etc., can solve the problems of reducing the efficiency of thin film transistors and increasing the leakage current of thin film transistors

Active Publication Date: 2008-07-02
LG DISPLAY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if a gate insulating film of a high dielectric constant insulating material is formed, the leakage current of the thin film transistor will increase, thereby reducing the efficiency of the thin film transistor

Method used

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  • Thin film transistor for liquid crystal display device
  • Thin film transistor for liquid crystal display device
  • Thin film transistor for liquid crystal display device

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Embodiment Construction

[0022] Reference will now be made in detail to the preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.

[0023] Hereinafter, a thin film transistor for an LCD device of the present invention will be described with reference to the drawings.

[0024] FIG. 1 is a cross-sectional view illustrating a thin film transistor for an LCD device of the present invention.

[0025] As shown in FIG. 1, the thin film transistor includes a gate 11 formed on a transparent insulating substrate 10; a gate insulating film 12 formed on the gate 11 by an insulating material having a high dielectric constant; formed on the gate 11. The semiconductor layer 13 on the gate insulating film 12, wherein the semiconductor layer 13 is composed of an impure amorphous silicon material highly doped with n-type impurities and an amorphous sil...

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PUM

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Abstract

A thin film transistor for an LCD device is disclosed, which comprises a gate electrode formed on a substrate; a gate insulation film formed of a high dielectric constant insulator having a bond structure of functional group, metal oxide, silicon and oxygen; and source and drain electrodes formed on the gate insulation film.

Description

[0001] This application claims the benefit of Korean Patent Application No. 2006-136660 filed on December 28, 2006, which is hereby incorporated by reference in its entirety. technical field [0002] The present invention relates to thin film transistors for use in liquid crystal display (LCD) devices. Background technique [0003] With the recent trends of low voltage, low power consumption, miniaturization, thin profile and light weight in various electronic equipment based on the rapid development of semiconductor technology, there is a great demand for flat panel display devices used as display devices for the electronic equipment . Accordingly, various flat panel display devices have been developed, such as liquid crystal display (LCD) devices, plasma display panels (PDP) and organic light emitting diodes (OLED). Among these flat panel display devices, LCD devices have drawn the most attention due to advantages in miniaturization, appearance, and light weight, as well ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/51H01L51/05H01L51/30G02F1/1362H10K99/00
CPCH01L29/4908H01L21/3124H01L27/1214H01L51/0525H01L21/02175H01L21/02126H10K10/472H01L21/28158H01L21/823462H01L29/517G02F1/136H10K85/113H10K85/151H10K85/623H10K10/468
Inventor 许宰硕田雄基金柄杰
Owner LG DISPLAY CO LTD