Multiple reaction cavity atom layer deposition device and method

Abstract

The invention belongs to a multi reaction chamber atomic layer deposition apparatus and a method, and belongs to the field of manufacturing equipment of semiconductors and processing technology. The atomic layer deposition apparatus comprises an A reaction chamber and a B reaction chamber, which are connected with a group of vacuum pumps through a transition chamber, the A reaction chamber and the B reaction chamber are reacted, the A reaction chamber and the B reaction chamber are respectively communicated with the reaction chambers and the transition chamber through channel valves, the reaction chambers are connected with a storeroom through a vacuum valve and a baffle of the storeroom, and an air inlet valve is arranged on the upper portion of the storeroom. The deposition method is that wafers of an integrated circuit are transferred back and forth between the A reaction chamber and the B reaction chamber through the channel valves, when transfers to the A reaction chamber, A phase reaction is produced, when transfers to the B reaction chamber, B phase reaction is produced, the A and the B phase reactions are conducted alternatively, and nanometer-thin layers or compound structure materials with thickness which is demanded by the integrated circuit are grown on each atomic layer of the surface of the wafers. The reaction chamber is less smirched, the deposition quality is improved, the reactant sources amount is saved, the process cost is reduced, and the environment hazard degree is lowest.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor manufacturing equipment and processing, and particularly relates to a multi-reaction cavity atomic layer deposition device and method. Background technique [0002] Atomic Layer Deposition (Atomic Layer Deposition) is abbreviated as ALD, which is a deposition technique in which a two-phase reaction is carried out in a heated reaction chamber. The first phase reaction is mainly the adsorption process of the reaction gas precursor, which will automatically terminate when the surface is saturated, and the second phase reaction, by introducing another reaction precursor, can be formed on the surface of the substrate wafer A specific material of an atomic layer. It grows layer by layer until the material is deposited to the desired thickness. [0003] Currently, the materials that can be deposited using ALD technology include: oxides, nitrides, fluorides, metals, carbides, and sulfides, and their nano...

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Problems solved by technology

Due to repeated vacuuming, the reaction source will be wasted, the opera

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