High speed gallium arsenide based channel strain high electron mobility transistor material
A high electron mobility, compound channel technology, applied in the field of compound semiconductor materials, can solve the problems of fragile InP substrate, restricting power amplifier circuits, low source-drain breakdown voltage, etc., and achieves superior millimeter-wave frequency device characteristics, Superior millimeter-wave frequency characteristics and the effect of improving the source-drain breakdown voltage
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[0029] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the following further describes the present invention in detail in conjunction with specific embodiments and with reference to the accompanying drawings.
[0030] Such as figure 2 As shown, figure 2 It is a schematic diagram of the high-speed gallium arsenide-based composite channel MHEMT material provided by the present invention. The MHEMT material is composed of a lattice strain layer In which is sequentially epitaxially grown on a GaAs substrate. x Al 1-x As, barrier layer under the channel In0.52 Al 0.48 As, channel layer doped with InP, channel layer without InP, channel layer with In 0.53 Ga 0.47 As, space isolation layer In 0.52 Al 0.48 As, planar doped layer, barrier layer In 0.52 Al 0.48 As and highly doped cap layer In 0.53 Ga 0.47 As composition.
[0031] Among them, the lattice strain layer In x Al 1-x As is grown on GaAs substrate by low-temperature epitaxial...
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