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Silicon micro mechanical pressure switch, preparation method and uses thereof

A pressure switch, silicon micromechanical technology, applied in the field of micromechanical pressure switch devices based on MEMS technology

Inactive Publication Date: 2010-07-28
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, although the tire pressure monitoring system has been widely studied, there are few reports of practical use of the device for quickly and automatically connecting the tire brake device after a tire blowout

Method used

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  • Silicon micro mechanical pressure switch, preparation method and uses thereof
  • Silicon micro mechanical pressure switch, preparation method and uses thereof
  • Silicon micro mechanical pressure switch, preparation method and uses thereof

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0025] The specific structure of the pressure switch will be explained in detail below in combination with the technological process provided by the present invention.

[0026] (1) On the polished single crystal silicon wafer 1, thermal silicon oxide is formed by high temperature oxidation, and the thickness of the oxide layer is 2 microns, which is used as a mask for wet etching. The pattern of the photoresist cavity, using the photoresist as a mask, first use dilute hydrofluoric acid (NH 4 F: HF = 7: 1) etch silicon oxide, and then remove the glue, use silicon oxide as a mask, wet-etch single crystal silicon with KOH at a certain temperature, form a prism-shaped air cavity and a square silicon elastic film, silicon The linear dimension of the elastic film is 1mm x 1mm square, see diagram 2-1 .

[0027] (2) On the other side of the single crystal silicon wafer 1, thermal oxidation of silicon is formed by high-temperature oxidation, and the thickness of the oxide layer is 1...

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PUM

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Abstract

The invention relates to a silicon micromechanical pressure switch, a manufacturing process and application thereof, which is characterized in that the pressure switch comprises an upper electrode and a lower electrode, silicon dioxide is used as an insulation layer between the two electrodes for separating. The upper electrode comprises an air cavity, a silicon elastic film, an orifice and a frame. The lower electrode comprises a flow guide hole, which is characterized in that wet etching silicon can form the air cavity and the silicon elastic film simultaneously. All structures are formed by silicon materials for realizing integration with braking circuits. Dry etching with fine selectivity is used to form the orifice and the frame and can precisely control the size of the orifice. The pressure switch is installed in every tire, when the tire bursts, and the switch can close rapidly, thereby connecting the circuit of a tire braking device and enabling the tire to brake rapidly.

Description

technical field [0001] The present invention relates to a silicon micromechanical pressure switch and a manufacturing method thereof, more precisely a micromechanical pressure switch device based on MEMS (Micro Electro-Mechanical System) technology. When a tire blows out, the pressure switch It can be quickly closed, so as to connect the circuit of the tire brake device, so that the tires can be quickly braked. It belongs to the field of microelectromechanical systems (MEMS). Background technique [0002] According to the statistics of the Ministry of Public Security, 70% of the traffic accidents on Chinese highways are caused by blown tires, while in the United States this ratio is as high as 80%. The current tire pressure monitoring system (TPMS) is mainly used to monitor tire pressure in real time, and there are mainly two solutions (direct system and indirect system). The direct tire pressure monitoring system uses the pressure sensor installed in each tire to directly...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01H35/34H01H11/00B81B7/02B81C1/00
Inventor 熊斌荆二荣王跃林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI