Chemical annealing method for making amorphous silicon battery more stable

An amorphous silicon thin film, enhanced chemical technology, applied in the field of solar photovoltaic materials

Inactive Publication Date: 2008-08-06
BEIJING XINGZHE MULTIMEDIA TECH
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  • Abstract
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Problems solved by technology

So even in the PECVD process, using highly diluted silane with hydrogen, the plasma excited hydrogen atoms do not have enough opportunities to continuously improve the structure of the formed silicon atoms

Method used

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Embodiment Construction

[0008] The most obvious method is to use plasma-enhanced chemical vapor deposition to form non-doped silicon hydride-based films. The following two steps are performed alternately. 1) Use a mixed gas of silane and hydrogen to maintain the substrate temperature at 150 Between -220℃, use 20-100mW / cm 2 The power density of radio frequency discharge, the growth of 2-10 nanometer thick amorphous silicon film, the growth rate is not higher than 0.6 nanometers / sec, after the film is formed, the glow discharge is stopped (that is, the supply of electrical energy to the negative electrode to excite the plasma is stopped. ), and draw the residual silane out of the vacuum chamber; 2) Introduce pure hydrogen or a mixture of inert gas and hydrogen with a proportion not exceeding 50% into the vacuum chamber, and apply plasma glow discharge on the above-mentioned amorphous silicon film to generate hydrogen Atom, and chemically anneal the silicon film, the duration is between 20-300 seconds, and ...

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Abstract

The invention discloses a chemical annealing method for improving the stability of intrinsic amorphous silicon thin film, which comprises: alternating the growth of silicon film whose thickness is 2-10 nanometers and the chemical annealing treatment in the process that plasmas are used to intensify a chemical vapor deposition method to generate hydrogenated amorphous silicon, sufficiently rebuilding and loosening atomic structures of hydrogenated silicon material, and lowing the electronic defect concentration. The material is in particular suitable for i layers in p-i-n type photovoltaic devices.

Description

Technical field [0001] The invention belongs to the field of solar photovoltaic materials, and particularly relates to the growth technology of hydrogenated amorphous silicon thin films. Background technique [0002] Solar photovoltaic power generation is one of the important ways to obtain renewable energy that is beneficial to the environment, and thin-film solar cells represent the development trend of photovoltaic technology. Solar cells based on silicon thin films have the advantages of low cost and convenient large-area integrated manufacturing, but their conversion efficiency is low. The process of photoelectric conversion takes place entirely in the i-layer composed of intrinsic amorphous silicon, and the function of the p-layer and the n-layer is to establish a built-in electric field in the relatively thick i-layer in order to collect the photo-induced carriers in the i-layer . The stability of amorphous silicon p-i-n solar cells almost entirely depends on the stability...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/513C23C16/52H01L31/0216
Inventor 李沅民马昕
Owner BEIJING XINGZHE MULTIMEDIA TECH
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