Chemical annealing method for making amorphous silicon battery more stable
An amorphous silicon thin film, enhanced chemical technology, applied in the field of solar photovoltaic materials
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[0008] The most obvious method is to use plasma-enhanced chemical vapor deposition to form non-doped silicon hydride-based films. The following two steps are performed alternately. 1) Use a mixed gas of silane and hydrogen to maintain the substrate temperature at 150 Between -220℃, use 20-100mW / cm 2 The power density of radio frequency discharge, the growth of 2-10 nanometer thick amorphous silicon film, the growth rate is not higher than 0.6 nanometers / sec, after the film is formed, the glow discharge is stopped (that is, the supply of electrical energy to the negative electrode to excite the plasma is stopped. ), and draw the residual silane out of the vacuum chamber; 2) Introduce pure hydrogen or a mixture of inert gas and hydrogen with a proportion not exceeding 50% into the vacuum chamber, and apply plasma glow discharge on the above-mentioned amorphous silicon film to generate hydrogen Atom, and chemically anneal the silicon film, the duration is between 20-300 seconds, and ...
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