Semiconductor switch

A semiconductor and switch technology, applied in the field of semiconductor switches, can solve the problems of increased leakage current and increased chip cost, and achieve the effect of preventing leakage current and high-speed operation output voltage accuracy

Inactive Publication Date: 2008-08-13
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In order to avoid the above-mentioned problems, methods of changing the size of MOS transistors, lowering the threshold voltage, and adopt

Method used

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  • Semiconductor switch
  • Semiconductor switch
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Example

[0044] The first embodiment

[0045] The semiconductor switch according to the first embodiment of the present invention will be described with reference to FIGS. 1 and 2. The semiconductor switch of the first embodiment of the present invention is composed of a gray level generation circuit 100, a gray level selector circuit 110, and a switch control circuit 120. The switch control circuit 120 is composed of a timing control circuit 121 and a back gate voltage control circuit 122.

[0046]Among them, the gray scale generation circuit 100 is constituted by a resistor string circuit in which a plurality of resistance elements R are connected in series between the H-side power supply and the L-side power supply. The number of resistance elements R is N, and the number of gray-scale voltages generated at the connection points between the resistors is N-1. The voltage of the H-side power supply and the L-side power supply, and the size and number of the resistance elements R are deter...

Example

[0053] "Second Embodiment"

[0054] The semiconductor switch according to the second embodiment of the present invention will be described with reference to FIG. 4. The semiconductor switch of the second embodiment is composed of an analog switch circuit 211, a switch control circuit 220, and a gray scale generation circuit 200. In addition, the switch control circuit 220 is composed of a timing control circuit 121, a back gate voltage control circuit 222, and a bias circuit 223.

[0055] However, since the timing control circuit 121 has the same configuration as that of the first embodiment, the same components as in FIGS. 1 and 2 are given the same reference numerals, and detailed descriptions thereof are omitted.

[0056] The gray scale generation circuit 200 has a structure in which a P-channel MOS transistor M2, a plurality of resistance elements R, and a diode D0 are connected in series between the H-side power supply and the L-side power supply. In addition, the back gate v...

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Abstract

A challenge in outputting a voltage near the midpoint potential in a semiconductor switch which operates based on a low voltage power supply is to avoid a decrease in operation speed and a deterioration in accuracy of the output voltage which would be caused due to an increase in ON-resistance or occurrence of current leakage. Thus, a structure including a gray level generation circuit (100), an analog switch circuit (111) and a backgate voltage control circuit (122) is provided wherein the backgate voltage of each of an N-channel MOS transistor (112) and a P-channel MOS transistor (113) of the analog switch circuit (111) to which the voltage of the gray level generation circuit (100) is input is supplied from the backgate voltage control circuit (122) which has an equal structure as that of the gray level generation circuit(100).

Description

technical field [0001] The present invention relates to a semiconductor switch, and more particularly to a semiconductor switch with low on-state resistance, small size, low cost, and excellent switching responsiveness. Background technique [0002] A prior art semiconductor switch will be described with reference to FIG. 6 . The semiconductor switch shown in Fig. 6 is made up of the gray level generation circuit 400 that produces gray level voltage, analog switch circuit 410 and switch control circuit 420, the arbitrary gray level of gray level generation circuit 400 is controlled by analog switch circuit 410. The stage voltage VM is delivered to the output terminal. [0003] As shown in Figure 6, the analog switch circuit 410 is generally composed of a P-channel MOS transistor 412 and an N-channel MOS transistor 411 connected in parallel, and the sources and drains of the P-channel MOS transistor 412 and the N-channel MOS transistor 411 are connected to each other respect...

Claims

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Application Information

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IPC IPC(8): H03K17/687H03K17/693G09G5/00
Inventor 串间贵仁小岛友和
Owner PANASONIC CORP
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