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Plasma processing apparatus and structure therein

A plasma and processing device technology, applied in the field of plasma processing devices, can solve problems such as poor insulation, discharge, and damage to the spray coating 210, and achieve the effects of preventing discharge and inhibiting damage

Inactive Publication Date: 2008-09-24
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the plasma treatment is carried out at a high temperature in this way, the thermal sprayed coating 210 is damaged, which may cause problems such as discharge due to poor insulation of the electrostatic chuck electrode 211 or the base material 200.

Method used

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  • Plasma processing apparatus and structure therein
  • Plasma processing apparatus and structure therein
  • Plasma processing apparatus and structure therein

Examples

Experimental program
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Embodiment Construction

[0034] Hereinafter, embodiments of the present invention will be described with reference to the drawings. figure 1 It is a diagram schematically showing a cross-sectional schematic configuration of a plasma etching apparatus 1 as a plasma processing apparatus according to this embodiment.

[0035] The plasma etching apparatus 1 is configured as a capacitively coupled parallel plate etching apparatus in which electrode plates face up and down in parallel, and a power source for plasma formation is connected.

[0036] The plasma etching apparatus 1 includes, for example, a cylindrical processing chamber (processing container) 2 made of, for example, anodized aluminum on the surface, and the processing chamber 2 is grounded. At the bottom of the processing chamber 2, a substantially columnar susceptor support table 4 on which a substrate to be processed, for example, a semiconductor wafer W is placed, is provided via an insulating plate 3 such as ceramics. In addition, a susce...

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PUM

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Abstract

The invention provides an inner structure of a plasma processing apparatus and the plasma processing apparatus for the use in a processing chamber of a plasma processing apparatus in which a plasma process is performed on a target substrate even in the high temperature situation. The substrate (100) is formed with a circular hole (101); the circular hole (101) is arranged with a columnar sleeve (120) which comprises insulated ceramics and other material; the sleeve (120) is arranged in the way of the lower side distance of the upper end part of the circular hole (101) of the top (121), which enables the sleeve (120) not contact to the spraying-plated film (110). The side wall potion of the circular hole (101) at the more upper potion is formed with an insulator layer (130). The spraying-plated film (110), the sleeve (120) and the insulator layer (130) form the upper surface (a first surface) of the substrate (100) and the insulated surface of the inner side surface (a second surface).

Description

technical field [0001] The present invention relates to a structure in a plasma processing apparatus and a plasma processing apparatus for performing plasma processing such as plasma etching and plasma CVD on substrates to be processed such as semiconductor wafers and LCD glass substrates. Background technique [0002] Conventionally, in the field of manufacturing semiconductor devices, liquid crystal display devices (LCDs), and the like, plasma processing apparatuses that generate plasma to perform plasma etching or plasma CVD are used. In such a plasma processing apparatus, the inside of the processing chamber is made into a reduced-pressure atmosphere to generate plasma. Therefore, an electrostatic chuck is often used as a mechanism for holding a substrate to be processed in a vacuum chamber. [0003] As described above, as an electrostatic chuck, a structure in which electrodes are provided in an insulating film is known. In addition, it is known to use a thermal spray...

Claims

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Application Information

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IPC IPC(8): H01L21/683H01L21/67H01L21/00H01L21/02H01L21/3065H01L21/311H01L21/3213H01L21/205H01L21/285H01L21/31H01L21/3205C23C16/44C23C16/458C23C16/513C23F4/00H01J37/32H05H1/00G02F1/1333
CPCC23C16/4581C23C16/5096
Inventor 樋熊政一武藤慎司
Owner TOKYO ELECTRON LTD