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Method for manufacturing thin-film transistor

A technology for thin film transistors and manufacturing methods, which is applied in the fields of semiconductor/solid-state device manufacturing, optics, instruments, etc., and can solve the problems of poor uniformity of critical voltage of components and large differences of components.

Inactive Publication Date: 2008-10-29
CHUNGHWA PICTURE TUBES LTD
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Problems solved by technology

Although this method can efficiently use solid-state lasers, because the last process uses lateral crystallization, the uniformity of the threshold voltage of the device is not good, and the difference between vertical and parallel devices is still large.

Method used

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  • Method for manufacturing thin-film transistor
  • Method for manufacturing thin-film transistor
  • Method for manufacturing thin-film transistor

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Embodiment Construction

[0031] FIG. 3a and FIG. 3b are schematic diagrams showing the structure of a low-temperature polysilicon panel according to an embodiment of the present invention. In this embodiment, a substrate 30 is first provided, the bottom layer of which is a glass layer 34, a silicon nitride (SiNx) film 33 is sequentially deposited on the glass layer 34, a silicon oxide (SiOx) film 32 and the uppermost layer are An amorphous silicon (a-Si) layer 31 .

[0032] Next, please refer to FIG. 4 which is a schematic diagram of the irradiation area of ​​the panel. The first laser irradiation of the crystal growth technology is performed on the partial area 312 of the substrate 30, that is, laser annealing using the principle of lateral crystal growth, such as sequential lateral crystallization, solid-state laser or Thin-beam Directional X'tallization (TDX), etc. Part of the region 312 is the circuit layout region of the thin film transistor in the subsequent low-temperature polysilicon process....

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Abstract

A manufacture method for a film transistor includes the following steps of: providing a substrate and forming a non-crystal silicon layer on the substrate; using laser annealing to irradiate the partial area of the non-crystal silicon layer of the substrate to carry out lateral crystal growing so as to form a plurality of polysilicon areas; carrying out surface oxide treatment on the substrate; carrying out global laser annealing irradiation on the substrate. The invention can improve the uniformity of an element and eliminate the warp effect of a grid voltage (Vth) to the element caused by the secondary laser, as well as enhance the interface stability of the polysilicon(p-Si) and an insulating layer (Insulator).

Description

technical field [0001] The invention relates to a method for manufacturing a thin film transistor, in particular to a method for manufacturing a thin film transistor TFT in a low-temperature polysilicon process. Background technique [0002] Thin film transistor liquid crystal display can be divided into two kinds of technologies of polysilicon and amorphous silicon. At present, the mainstream is mainly based on amorphous silicon, and the related technologies are relatively mature. Low Temperature Poly Silicon (LTPS) is the manufacturing process of a new generation of thin-film transistor liquid crystal displays. Since the carrier mobility of low temperature polysilicon is more than two hundred times higher than that of amorphous silicon technology, the biggest difference between low temperature polysilicon and traditional amorphous silicon displays lies in low temperature polysilicon. The response speed is fast, and it has the advantages of high brightness and high resolut...

Claims

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Application Information

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IPC IPC(8): H01L21/84H01L21/336H01L21/20H01L21/268G02F1/1362
Inventor 施智仁叶文钧何明徹杨文琪
Owner CHUNGHWA PICTURE TUBES LTD
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