Plasma processing apparatus and radio frequency matching network thereof

Abstract

The invention discloses a radio frequency matching network, comprising a radio frequency output port and at least two radio frequency input ports. A matching circuit between the radio frequency input ports and the radio frequency output port comprises a matching circuit which a first constant inductance and a first constant capacitor are connected in series to form. One end of the matching circuit is provided with a second grounded constant capacitor. The radio frequency matching network further comprises a first branch circuit. The first branch circuit comprises a first constant additional capacitor and a first switch which are connected with each other in series, and is connected with any of the first constant capacitor and the second constant capacitor in parallel. The invention also discloses plasma treatment equipment comprising the radio frequency matching network. Due to each element is all a constant element, the radio frequency matching network has small volume, low cost and faster matching speed, and at the same time, the impedance of the radio frequency matching network can be prominently changed by the first switch, and when the load impedance is greatly changed, the plasma treatment equipment still can favorably realize impedance matching.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a radio frequency matching network for plasma processing equipment. The present invention also relates to a plasma processing device comprising the above-mentioned radio frequency matching network. Background technique [0002] Plasma processing equipment is a processing equipment widely used in the field of semiconductor manufacturing. There are great differences among different plasma processing equipments (the differences are usually manifested in the number of radio frequency power sources, specific structural forms, etc.), and the following only takes one of them as an example to briefly introduce it. [0003] Please refer to figure 1 , figure 1 It is a schematic structural diagram of a typical plasma processing equipment in the prior art. [0004] A plasma processing device generally includes a casing (no reference numerals are added in the figure), in which a ...

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Problems solved by technology

However, the realization of this technical effect is at the cost of sacrificing the adaptability of the plasma processing equipment. Since the impedance of the RF matching network itself can only change slightly with the RF frequency, the range of its impedance matching is relatively small, and it can only To meet the requirements of impedance matching in a small range, the plasma processing equipment can achieve fewer processes

[0012] Therefore, according to the current mainstream point of view, it is still difficult to balance the size and cost of the RF matching network with the achievable range of impedance matching.

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