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Correcting method of boron and phosphorus content measurement in BPSG

A calibration method and phosphorus content technology, applied to measuring devices, instruments, scientific instruments, etc.

Inactive Publication Date: 2008-12-24
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This will be a big problem for BPSG's production quality

Method used

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  • Correcting method of boron and phosphorus content measurement in BPSG
  • Correcting method of boron and phosphorus content measurement in BPSG

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Embodiment Construction

[0012] Referring to Fig. 1, the steps of an embodiment of the present invention are as follows:

[0013] First is step 11, using X-ray fluorescence (XRF) to measure the boron and phosphorus concentrations of a series of borophosphosilicate glass (BPSG) films, XRF reflects the measured concentrations with signal intensity, and according to the XRF baseline, obtain And record the boron and phosphorus concentrations of each BPSG thin film corresponding to the signal intensity.

[0014] Next is step 12, using wet chemical method to measure the boron and phosphorus concentration of the BPSG film, that is, dissolving the BPSG film in a specific etching solution, and measuring the boron and phosphorus concentration with elemental quantitative analysis equipment.

[0015] It is better to use ICP / MS (Inductively Coupled PlasmaMass Spectrometer, Inductively Coupled Plasma Mass Spectrometer) for elemental quantitative analysis equipment. Before using this equipment, it needs to undergo a...

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Abstract

The invention discloses a correction method used for the measurement of boron (B) and phosphor (P) content in boron phoshosilicate glass (BPSG) so as to carry out the correction to a measurement instrument which is used for measuring the content of B and P of BPSG such as X-ray fluorometer (XRF), etc. The correction method mainly uses a wet-chemical method to measure the B and P content in the BPSG and compares the B and P content with the results measured by the XRF, thus working out the difference value; the accuracy of the XRF is adjusted by the difference value; the correction method comprises the detailed steps as follows: the B and P consistency of the BPSG film is measured by the XRF; the BPSG film is dissolved in an etching solution; the B and P consistency is measured by element quantitative analysis equipment; furthermore, the B and P consistencies respectively measured by the XRF and the element quantitative analysis equipment form a consistency correction curve used for correcting the XRF; subsequently, the consistency correction curve is used for correcting the XRF; alternatively, the XRF is corrected by XRF standard sheets prepared by the consistency correction curve.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a calibration method for measuring the content of B (boron) and P (phosphorus) in BPSG (Borophosphosilicateglass, borophosphosilicate glass). Background technique [0002] The BPSG (borophosphosilicate glass) film in the chemical vapor deposition (Chemical Vapor Deposition, CVD) process is an important interlayer dielectric. In BPSG, the content of B (boron) and P (phosphorus) has an important influence on its performance. The stable B concentration measurement will effectively improve the insulation effect between the upper metal and the lower silicon layer, and the accurate and stable P concentration measurement will effectively improve the adsorption capacity of free ions and prevent the short circuit phenomenon caused by ion dissociation. occur. [0003] In the CVD process, after the BPSG thin film is fabricated on the surface of the wafer, the composition of the BPS...

Claims

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Application Information

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IPC IPC(8): G01N23/223
Inventor 肖建军宋国宁张士仁杨洪春
Owner SEMICON MFG INT (SHANGHAI) CORP
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