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Semi-conductor light emitting component having microwave etching substrate

A light-emitting component, electromagnetic wave technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of time-consuming and high cost, and achieve the effect of shortening time, saving costs, improving external quantum efficiency and light extraction efficiency

Active Publication Date: 2008-12-31
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the surface morphology of the above-mentioned substrates is usually formed by dry etching or wet etching, which is not only time-consuming and expensive in the process

Method used

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  • Semi-conductor light emitting component having microwave etching substrate
  • Semi-conductor light emitting component having microwave etching substrate
  • Semi-conductor light emitting component having microwave etching substrate

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Embodiment Construction

[0016] see Figure 1A and Figure 1B , Figure 1A and Figure 1B It is a schematic diagram of a substrate 1 according to an embodiment of the present invention. The substrate 1 can be used for epitaxy of a semiconductor light emitting device.

[0017] In practical application, the substrate 1 can be silicon (Si), gallium nitride (GaN), aluminum nitride (AlN), sapphire (Sapphire), spinel (Spinnel), silicon carbide (SiC), gallium arsenide (GaAs), aluminum oxide (Al 2 o 3 ), lithium gallium dioxide (LiGaO 2 ), lithium aluminum dioxide (LiAlO 2 ) or Magnesium Tetroxide (MgAl 2 o 4 ).

[0018] The upper surface 10 of the substrate 1 has a plurality of notches 100 carved by electromagnetic waves. The epitaxy of the semiconductor light emitting device is performed on the upper surface 10 of the substrate 1 . In practical applications, the electromagnetic wave can be visible light, microwave, infrared, ultraviolet light, laser or other energy sources that can form the marks ...

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Abstract

The invention discloses a base plate for epitaxy of a semiconductor light-emitting component and a preparation method thereof. The upper surface of the base plate of the invention is provided with a plurality of nicks carved with electromagnetic waves, wherein, the epitaxy of the semiconductor light-emitting component is executed on the upper surface of the base plate.

Description

technical field [0001] The invention relates to a substrate, in particular to a substrate capable of improving the light extraction rate of a semiconductor light-emitting component. Background technique [0002] Nowadays, semiconductor light-emitting components (eg, light-emitting diodes) have been widely used in many fields, such as lighting and remote control fields. In order to ensure the high functional reliability and low energy consumption of the semiconductor light-emitting components, the external quantum efficiency (external quantum efficiency) of the semiconductor light-emitting components must be required. [0003] In principle, the external quantum efficiency of a semiconductor light-emitting component depends on its own internal quantum efficiency and extraction efficiency. The so-called internal quantum efficiency is determined by the properties and quality of the material. As for the release efficiency, it refers to the proportion of radiation emitted from t...

Claims

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Application Information

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IPC IPC(8): H01L33/00
Inventor 蔡宗良蔡炯棋
Owner EPISTAR CORP