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Light-emitting device

一种发光装置、显示装置的技术，应用在电气元件、晶体管、电固体器件等方向，能够解决成品率降低、成本升高、薄膜晶体管电特性降低等问题，达到批量生产性高、可靠性高、电特性良好的效果

Inactive Publication Date: 2009-01-07
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are problems in that compared with the case where an amorphous semiconductor film is used for the channel formation region, the process is complicated by crystallizing the semiconductor film, resulting in lower yield and higher cost.
[0008] In addition, there is a problem that the surface of crystal grains of the microcrystalline semiconductor film is easily oxidized
This situation also causes a problem that when the crystal grains of the channel formation region are oxidized, an oxide film is formed on the surface of the crystal grains, and this oxide film hinders the movement of carriers, so that the electrical characteristics of the thin film transistor are degraded

Method used

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Experimental program
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Embodiment approach 1

[0051] In this embodiment mode, for the manufacturing process of a thin film transistor used in a light-emitting device, refer to Figure 1A to Figure 12C Be explained. Figure 1A to Figure 4B , Figure 6A to Figure 8B 5A to 5C and FIGS. 9A to 9D are plan views of a connection region between a thin film transistor and a pixel electrode in one pixel.

[0052] An n-type thin film transistor having a microcrystalline semiconductor film is more preferably used for a driving circuit because its electric field effect mobility is higher than that of a p-type thin film transistor having a microcrystalline semiconductor film. It is preferable to make the polarity of all the thin film transistors formed on the same substrate the same in order to suppress an increase in the number of steps. Here, an n-channel type thin film transistor will be used for description.

[0053] like Figure 1A As shown, a gate electrode 51 is formed on a substrate 50 . The substrate 50 may use an alkali-f...

Embodiment approach 2

[0154] Next, the manufacturing process of the light emitting device will be described with reference to FIGS. 2A to 2C and FIGS. 15A and 15B. Here, a light emitting device utilizing electroluminescence is used to represent a light emitting device. Light-emitting elements utilizing electroluminescence are classified according to whether the light-emitting material is an organic compound or an inorganic compound. Generally, the former is called an organic EL element, and the latter is called an inorganic EL element. Also, while using Figure 1A and 1B and Figures 2A to 2C illustrate the fabrication process of thin film transistors, but may also be suitably used Figure 4A and 4B , Figure 6A to Figure 8B .

[0155] In the organic EL element, when a voltage is applied to the light-emitting element, electrons and holes from a pair of electrodes are respectively injected into a layer containing a light-emitting organic compound, whereby a current flows. Then, by recombination...

Embodiment approach 3

[0178] Next, the light emitting panel structure of one embodiment of the light emitting device of the present invention is shown below.

[0179] Figure 12A A form of a light-emitting panel is shown in which a signal line driver circuit 6013 is separately formed and connected to a pixel portion 6012 formed on a substrate 6011 . The pixel portion 6012 and the scanning line driver circuit 6014 are formed using a thin film transistor using a microcrystalline semiconductor film for a channel formation region. By forming a signal line drive circuit using a transistor that can obtain a field effect mobility higher than that of a thin film transistor using a microcrystalline semiconductor film for a channel formation region, it is possible to drive a signal line that requires a higher drive frequency than a scan line drive circuit. The circuit works stably. Note that the signal line driver circuit 6013 may also be a transistor using a single crystal semiconductor for a channel form...

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Abstract

A method of manufacturing, with high mass productivity, light-emitting devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a light-emitting device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

Description

technical field [0001] The present invention relates to a light-emitting display device using a thin film transistor for at least a pixel portion. Background technique [0002] In recent years, a technique of using a semiconductor thin film (about tens to hundreds of nm in thickness) formed on a substrate having an insulating surface as a channel formation region to constitute a thin film transistor has attracted attention. Thin film transistors are widely used in electronic devices such as ICs and electro-optical devices, and in particular, development of thin film transistors as switching elements of image display devices is being accelerated. [0003] As a switching element of an image display device, a thin film transistor using an amorphous semiconductor film in a channel formation region, a thin film transistor using a polycrystalline semiconductor film in a channel formation region, or the like is used. As a method of forming a polycrystalline semiconductor film, a t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/06H01L29/08H01L29/10H01L29/417H01L27/12
CPCH01L29/78618H01L29/78678H01L27/1214H01L27/1288H01L29/66765H01L29/41733
Inventor 山崎舜平铃木幸惠桑原秀明
Owner SEMICON ENERGY LAB CO LTD
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