Manufacturing method of first layer metal

Abstract

The invention provides a first layer metal fabrication method. The first layer metal is fabricated on a semiconductor which is made into a contact hole and comprises an adhesion layer and a diffusion impervious layer from upper to lower. In current technique, no heat treatment is carried out after the removal of the autoxidation layer during the fabrication of the first metal layer and the residual water vapors engender bubble defects. The method firstly removes the autoxidation layer and then carries out heat treatment; wherein the heat treatment is processed between 350 and 680 DEG C for 30-60 seconds; after that, the adhesion layer is fabricated and at last the diffusion impervious layer is fabricated. The method can totally get rid of the residual water vapors after the removal of the autoxidation layer, thus avoiding bubble defects on the first layer metal and greatly improving the firmness of the first layer metal.

Description

technical field [0001] The invention relates to the fabrication of semiconductor devices, in particular to a fabrication method of the first layer of metal. Background technique [0002] After the semiconductor device and its corresponding contact holes are fabricated, the first layer of metal will be fabricated next. The detailed process is: (a) remove the natural oxide layer; (b) make the adhesion layer; (c) make the diffusion barrier layer . [0003] The above step (a) first removes the oxide layer by hydrofluoric acid solution, then cleans it with deionized water, and then uses a drying device to dry the semiconductor device. During the drying process, the semiconductor device is usually heated (usually at a temperature of 100 to 200 degrees centigrade), but the water vapor component is likely to remain in the contact hole of the semiconductor device through the above drying, and the water vapor will be covered by the adhesion layer and the diffusion barrier layer in th...

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Problems solved by technology

[0003] The above step (a) first removes the oxide layer by hydrofluoric acid solution, then cleans it with deionized water, and then uses a drying device to dry the semiconductor device. During the drying process, the semiconductor device is usually heated (usually at a temperature of 100 to 200 degrees centigrade), but the water vapor component is likely to remain in the contact hole of the semiconductor device through the above drying, and the water vapor will be covered by the adhesion layer and the diffusion barrier layer in the subsequent process of making the adhesion layer and the diffusion barrier layer Thus forming bubble-like defects, which will affect the firmness of the first layer of metal adhesion, and easily make the first layer of metal peel off from the semiconductor device

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