Voltage dependent resistor dielectric material of zinc oxide and method of manufacturing electrical resistor

Abstract

The invention relates to a zinc oxide voltage dependent resistor medium material and a resistor preparation method, which belongs to the technology field of electronic material. The components of the zinc oxide voltage dependent resistor medium material comprises 85 percent to 95 percent of ZnO, 2 percent to 6 percent of Bi2O3, 1 percent to 5 percent of TiO2, 1 percent to 3.5 percent of Sb2O3, 1 percent to 4 percent of MnCO3, 1.2 percent to 5 percent of Co2O3, 0.2 percent to 1 percent of Cr2O3, 0.1 percent to 1 percent of ZrO2, 0.2 percent to 1 percent of Ni2O3 and 1.2 percent to 3 percent of SiO2. The chip type zinc oxide resistor preparation method comprises the steps of dosing according to a zinc oxide resistor medium material medium material, material mixing, material grinding, casting sizing agent making, casting, inner electrode printing, laminating, baking, temperature isostatic pressing, cutting, gule discharging, sintering, end electrode making, and the like. The zinc oxide voltage dependent resistor medium material of the invention is suitable for making chip type voltage dependent resistor; the prepared chip type voltage dependent resistor has the characteristics of low voltage-dependent voltage, high nonlinear coefficient and stable voltage-dependent characteristic, the sintering temperature is moderate, preparation technology is simple and is easy to control, and cost is low.

Description

technical field [0001] The invention belongs to the technical field of electronic materials, and relates to a zinc oxide varistor dielectric material and a preparation method of the zinc oxide varistor. Background technique [0002] With the rapid development of the electronics industry, especially the urgent need for electronic integration and miniaturization, more stringent requirements are put forward for varistor electronic ceramic materials. Low pressure, low leakage current, high nonlinear coefficient, low cost and high reliability of varistor ceramic materials are the general trend of varistor ceramic materials to be widely used. [0003] In the prior art, the current varistor ceramic materials are mainly divided into the following three series according to the sintering temperature: [0004] 1. High temperature series (typical sintering temperature is 1300°C). [0005] The multilayer chip varistor prepared with this series of materials needs to use 30% palladium an...

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Problems solved by technology

[0009] The multilayer chip varistor made of this series of materials adopts 100% silver internal electrode paste, and the internal electrode paste accounts for about 30% of the production cost. The production cost is low but the reliability is poor.

[0010] The above three types of sintering temperature series varistor ceramic materials cannot achieve mutual consideration in terms of low voltage, leakage current, high nonlinear coefficient and stability when making multilayer chip varistors, so it is difficult to meet low voltage, high Requirements for the use of nonlinear coefficients

[0011] Judging from the research status of multilayer chip varistor ceramic materials abroad, since the lead-free varistor ceramic materials will not pollute the environment during production and use, the prepared varistor ceramic materials Excellent performance, so this kind of varistor ceramic material has been the focus of people's attention. However, to increase the nonlinear coefficient to 45-48 and maintain the low-voltage sensitive voltage performance and low leakage current, the varistor ceramic material in this respect is currently still unavailable. No report

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