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Trench transistor and method for manufacturing the same

A technology of trench and body, applied in the field of trench transistor and its manufacture

Inactive Publication Date: 2009-03-11
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above method is only applicable when the trench gate is formed lower than the silicon surface, that is, it is not applicable when the trench gate is higher than the silicon surface

Method used

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  • Trench transistor and method for manufacturing the same
  • Trench transistor and method for manufacturing the same
  • Trench transistor and method for manufacturing the same

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Embodiment Construction

[0013] example figure 1 is a cross-sectional view of a trench transistor according to an embodiment of the present invention. reference example figure 1 , the trench transistor may include a gate oxide layer 20 formed over an inner wall of a trench formed in a semiconductor substrate. More particularly, the structure includes a semiconductor substrate, a high-density second conductivity type drain region 10, a low density second conductivity type drain region 12a, and a first conductivity type body or well 14a. Trenches may be formed over the low-density second conductivity type drain region 12a and the first conductivity type body 14a. The first conductivity type and the second conductivity type may be opposite. For example, the first conductivity type is P-type, and the second conductivity type is N-type, and vice versa.

[0014] According to an embodiment of the present invention, the gate 22 a of the trench transistor protrudes above the surface of the semiconductor su...

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Abstract

A trench transistor and a manufacturing method for the same are disclosed. The manufacturing method includes preparing a semiconductor substrate, forming a trench in the semiconductor substrate, forming a gate oxide layer over an inner wall of the trench, forming a gate having a first conductivity type by embedding polysilicon in the trench, the gate including a protruding portion protruding over a surface of the semiconductor substrate, forming a barrier layer by implanting second conductivity type ions in the protruding portion, and forming a second conductivity type source region over the surface of the semiconductor substrate.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2007-0090948 (filed on September 7, 2007) based on 35 U.S.C119, the entire contents of which are hereby incorporated by reference. technical field [0002] The present invention relates to a transistor, such as a metal-oxide semiconductor (MOS) field effect transistor (FET), and more particularly, to a trench transistor having a gate in the form of a trench and a manufacturing method thereof. Background technique [0003] One conventional trench transistor is disclosed in US Patent No. 6,583,010 B2, entitled "Trench Transistor with Self-Aligned Source". In the disclosed trench transistor, ion implantation is performed to reduce the gate-source overlap capacitance (overlap capacitance) as shown in FIG. 6A or FIG. 6C of the patent, thereby forming The L-shaped source structure. [0004] According to this method, since the source is formed by self-alignment using one terminal of the upper portion of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423H01L21/336
CPCH01L29/78H01L29/66621H01L29/1037H01L29/4236
Inventor 张炳琸尹汝祚
Owner DONGBU HITEK CO LTD