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Method and structure for thin film photovoltaic materials using semiconductor materials

A photovoltaic and semiconductor technology, applied in the direction of layered products, etc., can solve problems such as poor efficiency, poor reliability, long-term use, etc.

Inactive Publication Date: 2009-04-01
CM MFG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Similar limitations exist for the use of thin-film technologies in the manufacture of solar cells
That is, the efficiency is usually poor
In addition, the reliability of the membrane is usually poor and cannot be used for a long time in the traditional application environment

Method used

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  • Method and structure for thin film photovoltaic materials using semiconductor materials
  • Method and structure for thin film photovoltaic materials using semiconductor materials
  • Method and structure for thin film photovoltaic materials using semiconductor materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0390] The substrate can be any optically transparent material such as glass, quartz glass, plastic, etc., on which the transparent conductive electrode (TCE) is deposited, which can employ various vacuum methods such as sputtering, evaporative deposition, and solution deposition. Examples of TCE are indium tin oxide (ITO), aluminum doped zinc oxide (ZnO:Al) and fluorine doped tin oxide (SnO 2 :F). In these examples we used ZnO:Al.

[0391] A nanoparticle (NP) layer of the first material is then deposited on the TCE. The thickness of the film can be from about 50 nm to about 1000 nm. This is performed using colloidal suspensions of NPs and various types of solution deposition methods such as spin coating, spray coating, inkjet printing, dip coating, doctor blade coating, electrophoresis, electrochemical deposition, etc. The deposited first material can be a metal oxide such as ZnO, TiO 2 , SnO 2 , WO 3 , Fe 2 o 3 Wait. In addition, the first material can make metal su...

Embodiment 2

[0395] In another embodiment of Example 1, NPs of the first material and NPs of the second material are deposited together in a similar pattern to the deposition of NPs of the first material in Example 1. As in Example 1, the two materials are then sintered for a specified time and temperature, or by applying pressure.

Embodiment 3

[0397] Start with TCE coated on the Example 1 substrate. Films of electron transporting hole blocking material (ETHBM) are deposited to a thickness of about 100 nm to about 1000 nm using vacuum techniques such as sputtering or evaporative deposition or solution deposition techniques. ETHBM can be metal oxides such as ZnO, TiO 2 , SnO 2 , WO 3 , Fe 2 o 3 etc., can be undoped or n-doped. The nanocomposite membranes described in Example 1 were then processed on the ETHBM. Finally, a top electrode is deposited on the nanocomposite film. The top electrode can be deposited by methods such as sputtering, evaporative deposition, screen printing, painting, thin film lamination, and the like.

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Abstract

A photovoltaic device and related methods. The device has a nanostructured material positioned between an electron collecting electrode and a hole collecting electrode. An electron transporting / hole blocking material is positioned between the electron collecting electrode and the nanostructured material. In a specific embodiment, negatively charged carriers generated by optical absorption by the nanostructured material are preferentially separated into the electron transporting / hole blocking material. In a specific embodiment, the nanostructured material has an optical absorption coefficient of at least 10<3 >cm<-1 >for light comprised of wavelengths within the range of about 400 nm to about 700 nm.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to commonly owned US Provisional Patent Application No. 60 / 800,801 filed May 15, 2006 in the name of Howard W.H. Lee, which is hereby incorporated by reference for all purposes. technical field [0003] The present invention generally relates to photovoltaic materials (photovoltaic materials, photocoltaicmaterial). More specifically, the present invention provides a method and structure for producing photovoltaic materials including Group IV materials (eg, silicon, germanium) and metal oxides such as copper oxide, etc., using thin film methods. By way of example only, the present methods and structures are implemented using nanostructural designs, but it should be appreciated that the invention may have other structural designs. Background technique [0004] From the beginning of time, human beings have been challenged to discover ways to exploit energy sources. Energy comes in many f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B5/16
Inventor 霍华德·W·H·李
Owner CM MFG
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