Wet-method etching device for oxide film

Abstract

The invention discloses a wet etching device for an oxide thin film. The wet etching device comprises an etching groove and a carrier for containing a thin film substrate,; the bottom of the etching groove takes an arc shape; the bottom of the carrier is equipped with a wheel, the etching groove is internally equipped with an orbit, the wheel enters in and out of the etching groove along the orbit, a cover plate is arranged on the etching groove, and the cover plate does not interfere with the carrier to enter in and out of the etching groove. The device further comprises a control unit for controlling the motion of the carrier, and a substrate clamp is arranged on the carrier to fix the thin film substrate. The flow line production design idea of the motion of the carrier in the etching groove ensures the equal stay time of each thin film substrate in an acid liquor tank and the small variation range of the concentration of the acid liquor, increases the utilization rate of the acid liquor, enhances quality of the product and speeds up the production efficiency.

Description

technical field [0001] The invention relates to an etching device, in particular to a wet etching device for the textured surface of an oxide film. Background technique [0002] At present, in the production of solar cells, the incident surface of the solar cell is usually prepared into a "pyramid"-like suede structure, so that the same beam of light can be reflected multiple times between the suede surfaces, which improves the scattering of incident light and the suede surface The function of "light trapping" effectively reduces the reflection of incident light, prolongs the time of light passing through the active layer of the battery, enhances the absorption of light, and increases the photoelectric conversion efficiency of the battery. Therefore, in the preparation process of crystalline silicon batteries, it is necessary to etch the surface of silicon wafers with hydrofluoric acid to make texture; Acid engraved velvet. [0003] However, the traditional texturing proce...

AI Technical Summary

Problems solved by technology

There are two problems in this texturing method: one, the uppermost substrate enters the acid solution tank last and comes out of the acid solution tank first, which will cause uneven etching between the substrates; second, due to The substrate is in a static state during the etching process, and the acidity of the partial solution caused by etching will reduce the etching speed of the oxide film

[0005] 1. Since the substrates enter the acid solution tank one after another, the time of immersion in the acid solution tank is different, resulting in uneven etching between the substrates, and the product quality is not high

[0006] 2. The process from entering to taking out the acid solution tank from the shelf where the substrate is placed every time causes the waiting time of the next shelf, and the production efficiency is low

[0007] 3. Since the substrate is in a static state during the etching process, the acid solution is diluted by the reaction, resulting in a continuous decrease in the acid concentration near the substrate during the etching process of the substrate, prolonging the production cycle

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