Processing method for double-layer anti-reflection film of solar cell

Abstract

The invention relates to an antireflection coating of a solar cell, in particular to a processing method of the dual-layer antireflection coating of the solar cell. The processing method comprises the following steps: the first step: wet oxygen, water vapor is introduced at the high temperature to generate a silicon dioxide film at the surface of a silicon wafer; the second step: PECVD deposition, the silicon nitride deposition is carried out on the silicon dioxide film which is well prepared in the step one. The method mainly solves the technical problems of unstable power and easy attenuation of the existing cell with the single-layer antireflection coating, and the stability of the output power of the solar cell is significantly improved by the processing of the dual-layer antireflection coating.

Description

Technical field:

[0001] The invention relates to an anti-reflection film of a solar cell, in particular to a processing method for a double-layer anti-reflection film of a solar cell. Background technique:

[0002] The common method used in the past is to use PECVD (high temperature vapor phase chemical deposition) to directly deposit silicon nitride on the surface of the silicon wafer after the diffusion is completed. Compared with the earlier TiO 2 There is a significant improvement, because the silicon nitride film is rich in [H + ] bond, which can capture the defective electrons generated by the surface structure treatment, reduce the number of surface recombination centers, and increase the output current of the solar cell, but due to [H + ] bond is not a stable structure, it is easy to break away from the silicon wafer surface, [H + ] bond detachment causes defects and affects the performance of the solar cell. Intuitively speaking from the data, this is the main rea...

Examples

Embodiment 1

[0049] Embodiment one: a kind of double-layer anti-reflection film processing method of solar cell, concrete steps are:

[0050] The first step: wet oxygen, that is, the wet oxygen process is performed on the surface of the diffused silicon wafer. The so-called wet oxygen process is to pass water vapor at high temperature to form a silicon dioxide film on the surface of the silicon wafer.

[0051] Specific steps are as follows:

[0052] 1. Put the diffused silicon wafer into the diffusion furnace, and wait for the temperature to rise to the specified temperature;

[0053] 2. Start to feed oxygen, and after the oxygen passes through the deionized water container, the water is brought into the furnace body;

[0054] 3. After the reaction is over, take it out.

[0055] The main process parameters of the wet oxygen operation process are:

[0056] Oxygen flow rate: 1.5—1.7L / min, the best value: 1.6L / min;

[0057] Temperature: 500°C—700°C, the best value: 600°C;

[0058] Time: ...

Technical field:

[0001] The invention relates to an anti-reflection film of a solar cell, in particular to a processing method for a double-layer anti-reflection film of a solar cell. Background technique:

[0002] The common method used in the past is to use PECVD (high temperature vapor phase chemical deposition) to directly deposit silicon nitride on the surface of the silicon wafer after the diffusion is completed. Compared with the earlier TiO 2 There is a significant improvement, because the silicon nitride film is rich in [H + ] bond, which can capture the defective electrons generated by the surface structure treatment, reduce the number of surface recombination centers, and increase the output current of the solar cell, but due to [H + ] bond is not a stable structure, it is easy to break away from the silicon wafer surface, [H + ] bond detachment causes defects and affects the performance of the solar cell. Intuitively speaking from the data, this is the main rea...

Examples

Embodiment 1

[0049] Embodiment one: a kind of double-layer anti-reflection film processing method of solar cell, concrete steps are:

[0050] The first step: wet oxygen, that is, the wet oxygen process is performed on the surface of the diffused silicon wafer. The so-called wet oxygen process is to pass water vapor at high temperature to form a silicon dioxide film on the surface of the silicon wafer.

[0051] Specific steps are as follows:

[0052] 1. Put the diffused silicon wafer into the diffusion furnace, and wait for the temperature to rise to the specified temperature;

[0053] 2. Start to feed oxygen, and after the oxygen passes through the deionized water container, the water is brought into the furnace body;

[0054] 3. After the reaction is over, take it out.

[0055] The main process parameters of the wet oxygen operation process are:

[0056] Oxygen flow rate: 1.5—1.7L / min, the best value: 1.6L / min;

[0057] Temperature: 500°C—700°C, the best value: 600°C;

[0058] Time: ...