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Potato production increasing method and device by treating potato seed using electron beam irradiation

An electron beam irradiation, potato technology, applied in the fields of seed and rhizome treatment, botanical equipment and methods, plant genetic improvement, etc., can solve the problem of slow effect of potato

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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a method and device for increasing the yield of potato seed potatoes by electron beam irradiation, so as to overcome the shortcomings of the existing radiation mutation breeding methods that are slow in increasing potato yield

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  • Potato production increasing method and device by treating potato seed using electron beam irradiation
  • Potato production increasing method and device by treating potato seed using electron beam irradiation
  • Potato production increasing method and device by treating potato seed using electron beam irradiation

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specific Embodiment approach 1

[0009] Specific embodiment one: the technical scheme of this embodiment is to irradiate seed potato with electron beam, described electron beam is the charged particle that accelerator produces, and the energy range of electron beam is between 0.5~0.9 megaelectron volts (MeV), The dose of the electron beam is 1～24 Gray (Gy); the dose rate ranges from 0.1 Gray / second (Gy / s) to 0.27 Gray / second (Gy / s), and the preferred dose rate is 0.16 Gray / second (Gy / s) ; The potato seed potato after irradiation is the seed potato for planting. The whole irradiation process was completed at room temperature. The selected potato seed potatoes are generally seed potatoes of non-defective and excellent varieties with a diameter of 0.5 cm to 3 cm.

specific Embodiment approach 2

[0010] Specific implementation mode two: as figure 1 As shown, the device of the present embodiment is as follows: it comprises accelerator scanning box 1, baffle plate 3, beam meter 4, beam current integrator 6 and metal plate 9, and accelerator scanning box 1 is arranged on the top and makes the electron that it emits The beam is vertically downward, and a baffle 3 is arranged under the accelerator scanning box 1, and a metal plate 9 is arranged under the baffle 3, and both the baffle 3 and the metal plate 9 are arranged perpendicular to the electron beam emission direction and make the baffle 3 block the accelerator scanning box 1 shoot the electron beam to the metal plate 9, one end of the beam current meter 4 is connected on the baffle plate 3, one end of the beam current integrator 6 is connected on the metal plate 9, the other end of the beam current meter 4 and the beam integrator 6 The other end is grounded. Metal plate is preferably selected aluminum plate, and baff...

specific Embodiment approach 3

[0012] Specific implementation mode three: as figure 1 As shown, the difference between this embodiment and the second embodiment is that it also includes a metal bracket 7 and an insulating material body 8, the metal plate 9 is arranged on the metal bracket 7, and the insulating material body 8 is arranged between the metal plate 9 and the metal bracket 7 The two are separated between the two, and the area of ​​the insulating material body 8 is less than the area of ​​the special metal plate 9 so that the insulating material body 8 can not be exposed outside the metal plate 9 when vertically looking down from top to bottom.

[0013] The irradiation operation steps of this embodiment are as follows: the first step, debug the electron beam energy of the accelerator scanning box 1 under blank conditions, such as debugging to 0.8MeV; debug the intensity of the electron beam 2 with the beam current meter 4 connected to the baffle plate 3 (i.e. dose rate). In the second step, the ...

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Abstract

Provided is a method of causing potato seeds of potatoes to increase in yield through electron beam irradiation and a device thereof. The invention relates to a method through electron beam irradiation and a device thereof, which overcomes drawbacks of slow act on increasement in yield of the potatoes in the prior irradiation mutation breeding method. According to the inventive method, the electron beam is used to irradiate the potato seeds of the potatoes, wherein the electron beam is the charged particles generated by an accelerator, dose of the electron beam is 1-24 grail; the range of dose rate is 0.1-2.7 grail / second. The inventive device comprises an accelerator scanning case, a baffle, a beam flux gauge, a beam flux integrator and a metal plate, wherein the accelerator scanning case is arranged above, the baffle is arranged on a lower part of the accelerator scanning case, the metal plate is arranged on the lower part of the baffle, one end of the beam flux gauge is connected on the baffle, one end of the beam flux integrator is connected on the metal plate, and the other end of the beam flux gauge and the beam flux integrator is grounded.

Description

technical field [0001] The invention relates to a technique for increasing potato yield, in particular to a method and device for irradiating seed potato. Background technique [0002] Radiation mutation breeding mainly refers to the method of using physical mutagen to mutate crops, changing the genetic genes of crops, and cultivating new varieties after several generations of artificial selection. This method has a high mutation frequency, a wide mutation spectrum, can break the linkage of traits, and stabilize mutation traits quickly. Therefore, it has become an important means of creating new germplasm and cultivating new varieties, and has achieved success in the mutation breeding of various crops. But potato is a polyploid crop with asexual reproduction, its genetic basis is complex, and genetic variation is easy to disappear, so the effect of physical mutagens on potato mutation breeding is very limited. Research on mutagens is also mostly limited to 60 The mutagenic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): A01C1/00A01H1/06
Inventor 斯琴图雅胡林双王强田汝超
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