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Thick aluminum film forming process

A process method, aluminum film technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as wiring short circuit, affect product yield and reliability, reduce production throughput, etc., to reduce whisker defects the effect of

Active Publication Date: 2010-05-26
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Because whisker defects may cause short circuits in wiring, it will affect product yield and reliability
The problem of whisker defects (whisker) in thick aluminum film formation has always been a difficult problem in the process. The general practice in the industry is to solve it by reducing the power, which will greatly reduce the production throughput, and the effect is not ideal.

Method used

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Embodiment Construction

[0013] An embodiment of the thick aluminum film forming process of the present invention is as follows: figure 1 As shown, in the process of thick aluminum film formation, a part of the thickness of the aluminum film (usually an aluminum-copper alloy doped with a small amount of copper) is deposited on the silicon wafer first, and then the silicon wafer with a part of the thickness of the aluminum film deposited is sent to After cooling in the cooling chamber, continue to deposit the aluminum film on the cooled silicon wafer on which a part of the thickness of the aluminum film has been deposited, and finally form the required thickness of the aluminum film on the silicon wafer.

[0014] An example of the present invention is figure 2 As shown, after the silicon wafer enters the Endura5500 equipment through the loading and unloading chamber 11, it is aligned in the alignment chamber 12. Then go to an aluminum-copper deposition chamber 13 to deposit half of the aluminum-coppe...

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Abstract

The invention discloses a thick aluminum film forming process method. In the process of thick aluminum film forming, the method comprises the following steps: depositing an aluminum film with partialthickness on a silicon chip; sending the silicon chip deposited with the aluminum film with partial thickness to a cooling cavity and cooling down; continuously depositing the aluminum film by using the cooled silicon chip deposited with the aluminum film with partial thickness; repeating the process of deposition and cooling for a plurality of times; and finally, forming the aluminum film with needed thickness on the silicon chip. The method can reduce whisker disadvantage in thick aluminum film forming.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a thick aluminum film forming process method. Background technique [0002] In semiconductor products, power devices generally use thick aluminum (generally more than 2 microns) as the top layer wiring. In the existing process, the general deposition method is continuous film formation without going out of the process chamber. During the deposition process, the energy generated by the bombardment of argon ions on the target material will increase the temperature of the silicon wafer as the particles reach the surface of the silicon wafer. The thicker the deposited film, the higher the wafer temperature. At this time, the energy in the aluminum film is very high. If it is not released effectively and in time, the energy will be released through the abnormal growth of aluminum. This abnormal growth is whisker. Since the whisker defect may cause a short circuit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3205H01L21/768H01L21/60
Inventor 季芝慧刘艳平
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP