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Cadmium telluride thin-film solar cell with gradient structure and manufacture method thereof

A solar cell and gradient structure technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of increasing carrier recombination, reducing Voc and FF values, etc., to improve efficiency, facilitate absorption, and avoid abnormal growth Effect

Active Publication Date: 2015-08-19
湖南共创光伏科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The holes and cracks filled in the film increase the recombination of carriers and cause leakage current, which seriously reduces the Voc and FF values

Method used

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  • Cadmium telluride thin-film solar cell with gradient structure and manufacture method thereof
  • Cadmium telluride thin-film solar cell with gradient structure and manufacture method thereof
  • Cadmium telluride thin-film solar cell with gradient structure and manufacture method thereof

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Embodiment Construction

[0042] Below in conjunction with embodiment the present invention will be further described.

[0043] Such as Figure 2-4 As shown, a cadmium telluride thin-film solar cell with a gradient structure, according to the direction of incident light, sequentially includes a glass substrate, a TCO front electrode, a CdS window layer, a CdTe absorber layer, a back contact layer, a metal back electrode, and a back reflection package Materials and backplane glass, where the CdTe absorber layer (p layer) and the CdS window layer (i layer) form a pn junction.

[0044] The CdTe absorption layer in the pn junction of the cadmium telluride thin film solar cell is Cd x Te y Gradient structure, wherein 0≤x≤1, 0≤y≤1, the gradient structure is a multilayer structure with an energy gap gradient; the Cd x Te yThe energy gap of the gradient structure is between 1.6eV-1.3eV, and there is a uniform transition from the first layer to the last layer from the high energy gap layer to the low energy...

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Abstract

The invention discloses a cadmium telluride thin-film solar cell with gradient structure and a manufacture method thereof. The cadmium telluride thin-film solar cell comprises a pn junction formed by a CdTe absorbing layer and a CdS window layer. The CdTe absorbing layer of the pn junction of the cadmium telluride thin-film solar cell is a Cd<x>Te<Y> multilayer gradient structure with an energy gap gradient, wherein x is more than or equal to 0 but is less than or equal to 1 and y is more than or equal to 0 but is less than or equal to 1. The gradient structure has a relatively wide energy spectrum range, may separate and capture ionized electrons, and generateS heavy current under the excitation of the sun so as to improve the efficiency of the thin-film solar cell. The gradient structure prevents abnormal growth of crystal grains and generation of holes and cracks and produces a compact high-quality film with uniform crystal grain sizes and matched energy gaps. Further, the gradient structure is beneficial to the full absorption of sunlight so as to further improve the efficiency of the cadmium telluride thin-film solar cell.

Description

technical field [0001] The invention relates to a solar cell, a thin film solar cell with a gradient structure and a manufacturing method thereof, in particular to a cadmium telluride thin film solar cell structure with a gradient structure and a manufacturing method thereof. Background technique [0002] Since the French scientist AE. Becquerel discovered the photoelectric conversion phenomenon in 1839, the first solar cell based on semiconductor selenium was born in 1883. Russell obtained the first solar cell patent (US.2,402,662) in 1946, and its photoelectric conversion efficiency was only 1%. It was not until 1954 that Bell Laboratories' research discovered that doped silicon-based materials have high photoelectric conversion efficiency. This research laid the foundation for the modern solar cell industry. In 1958, the Haffman Power Company of the United States installed the first solar panel on a satellite in the United States, and its photoelectric conversion effici...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0296H01L31/065
CPCY02E10/50H01L31/065H01L31/0296
Inventor 李廷凯李晴风钟真
Owner 湖南共创光伏科技有限公司
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