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Semiconductor device and method for manufacturing the device

A semiconductor and device technology, applied in the field of semiconductor devices and their manufacturing, can solve problems such as semiconductor device performance degradation and damage, and achieve the effects of minimizing degradation, maximizing manufacturing yield, and minimizing damage

Inactive Publication Date: 2011-03-16
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, by-products or particles generated during the polysilicon etch-back process may cause damage to the polysilicon layer formed in the trench, thus deteriorating the performance of the semiconductor device

Method used

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  • Semiconductor device and method for manufacturing the device
  • Semiconductor device and method for manufacturing the device
  • Semiconductor device and method for manufacturing the device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0010] Hereinafter, a semiconductor device and a method of fabricating the same according to some embodiments will be described in detail. Exemplary figure 1 to exemplary Figure 7 A cross-sectional view according to some embodiments is illustrated.

[0011] as exemplified figure 1 As shown, a method of fabricating a semiconductor device according to some embodiments may include forming a first oxide layer 110 on and / or over a silicon (Si) substrate 100 that may serve as a sub substrate. The first oxide layer 110 may be formed using a thermal oxidation process or a chemical vapor deposition (CVD) process. The first oxide layer 110 may be formed using a thermal oxidation process in an oxygen atmosphere at a temperature of about 900°C to about 1000°C. The first oxide layer 110 may be formed to be about 200 to about 300 thickness of.

[0012] as exemplified figure 2 As shown, a doped polysilicon layer 120 may be formed on and / or over the first oxide layer 110 . The ...

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Abstract

A semiconductor device and / or a method for manufacturing a semiconductor device. A method may include at least one of the following: Forming a first oxide layer on a silicon substrate. Depositing a polysilicon layer on the first oxide layer. Forming a pattern on the polysilicon layer and the first oxide layer to expose a portion of the silicon substrate forming a polysilicon layer pattern and a first oxide layer pattern. Forming a second oxide layer on the entire surface of the silicon substrate. Forming a pattern on the second oxide layer to expose a portion of the silicon substrate. Growinga silicon on the exposed silicon substrate to form a silicon epitaxial layer. Removing the second oxide layer formed on the polysilicon layer pattern.

Description

technical field [0001] Embodiments relate to semiconductor devices with simplified processes and methods of fabricating the same. Background technique [0002] A trench metal-oxide-semiconductor field effect transistor (MOSFET) is a transistor in which a channel is formed vertically and a gate extends from a source and a drain and is provided in the form of a trench between the source and the drain. The trenches have a profile formed by a thin dielectric such as an oxide layer in a dug groove of the semiconductor substrate. The trenches are filled with conductors such as polysilicon to form trench gate structures. The source regions are formed by implanting high concentrations of ions along both sides of the trench. The trenches can be filled with polysilicon, and a polysilicon layer can be deposited over the entire surface of the semiconductor substrate. Typically, the trenches are formed to a depth of about 1.5 μm to about 2.0 μm, and the polysilicon layer is deposited ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L21/336
CPCH01L29/66628H01L29/66734H01L29/66651H01L29/4236
Inventor 郑大浩
Owner DONGBU HITEK CO LTD