Measuring method and apparatus for mask bench scanning inclination

Abstract

The invention provides a method and a device for measuring oblique scan of a mask platform. The method comprises: firstly, laying a test mask on the mask platform, wherein a plurality of rows of aligning marks are arranged on the test mask; secondly, moving the mask platform, and making a row of aligning marks on the test mask positioned in the center of a visual field of an exposed light source system; thirdly, opening exposed light sources, and making a plurality of aligning marks imaged below a projection objective; fourthly, horizontally and vertically moving an image sensor system, and scanning space images of the row of aligning marks so as to acquire the height difference Zf of vertical positions of the space images of the aligning marks opposite to a focal plane of an image space of the projection objective; fifthly, converting the Zf into the height difference Zi of the vertical positions of the aligning marks opposite to a focal plane of an object space of the projection objective; sixthly, repeatedly executing the second step, the third step, the fourth step and the fifth step so as to acquire the Zi of different rows of aligning marks, and establishing a plurality of corresponding oblique scan deviation models according to the relations between the oblique scan deviation of the mask platform and the Zi; and seventhly, calculating the oblique scan deviation of the mask platform according to the plurality of the models.

Description

technical field [0001] The invention relates to a measuring method and device for a photolithography machine system, in particular to a method and a device for measuring the scanning inclination of a mask table in a photolithography machine system. Background technique [0002] Such as figure 1 As shown, in the scanning exposure process of the lithography machine system, the height of the mask table 10 is controlled by three actuators 20 (for simplicity, figure 1 Only two actuators are shown in the figure), the plate holder 30 carries the mask 40 and moves along the scanning direction of the mask table (ie, the Y direction) on the marble upper surface of the mask table 10 . [0003] However, due to the limitation of machining accuracy, the marble upper surface of the mask table 10 is not ideally parallel to the optimum object plane 50 of the projection objective lens 70, so during the scanning exposure process with the exposure light source 80, the mask it carries 40 has a...

AI Technical Summary

Problems solved by technology

[0006] However, in the prior art, using the exposure method to measure the scanning tilt needs to consume a rubber-coated silicon wafer, and at the same time, reading the focal plane at different positions of the mask stage under an optical microscope will bring large random errors

In addition, the method of measuring the scanning tilt of the mask stage in the prior art as mentioned above needs to go through the steps of gluing, exposure, development, reading, fitting calculation, etc., which takes a long time

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