Supercharge Your Innovation With Domain-Expert AI Agents!

Power supply structure used for structural special application integrated circuit

An integrated circuit and structural technology, applied in the field of power supply architecture, can solve the problems of simplified wiring obstruction of power lines and ground lines, and achieve the effect of simplifying circuit unit wiring and reducing occupied area.

Inactive Publication Date: 2009-08-05
FARADAY TECH CORP
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Under this requirement, the through-type power line and ground line become obstacles to simplify wiring

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Power supply structure used for structural special application integrated circuit
  • Power supply structure used for structural special application integrated circuit
  • Power supply structure used for structural special application integrated circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] With regard to power and ground wires, traditional designs are as figure 2 As shown, there are power lines and ground lines passing through each circuit unit on each metal layer, so that all circuits can receive power. In fact, from the point of view of the entire structural ASIC, there is no need for so many power lines and ground lines. For example, all the MOS transistors can be made on the bottom non-programmable level, as long as the power line and ground line running through all circuit units are arranged on one of the non-programmable levels, all circuits can receive power. As for the upper programmable level, it is only necessary to make a short section of the power line and ground line, or even a point, to match the circuit design requirements and connect the source (source) or drain (drain) of some MOS transistors to the power supply or ground. , or connect the gates of unused MOS transistors to power or ground to avoid floating. That is to say, only one me...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A power architecture is used in a structured special application integrated circuit. The power architecture includes a first conductor and a second conductor. The first conductor is coupled with a fixed voltage and at least passes through two edges of a circuit unit. The second conductor is connected with the first conductor by a contact window. The second conductor at most passes through one edge of the circuit unit. The structured special application integrated circuit includes a first metal layer and a second metal layer; the first metal layer comprises the first conductor and the second metal layer comprises the second conductor.

Description

technical field [0001] The present invention relates to a structural application-specific integrated circuit (structural application-specific integrated circuit, referred to as structural ASIC), and in particular to a power architecture applied to a structural application-specific integrated circuit. Background technique [0002] The general application specific integrated circuit (ASIC) has no fixed structure, and the mask of each layer (layer) can be designed arbitrarily, but the structural type of ASIC is different. figure 1 A partial structure of a conventional ASIC 100 is shown. figure 1 Below is a metal oxide semiconductor field effect transistor (MOS transistor for short), including a P-type substrate (substrate) 105, N-type wells (N-well) 103, 104, and a gate (gate) The insulating layer 102. There are three metal layers 121 - 123 connected to the MOS transistors via a contact 111 above. [0003] The characteristic of the structured ASIC is that some layers are fix...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L23/522H01L23/528
Inventor 吴长余古明鑫谢尚志王心石
Owner FARADAY TECH CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com