Tunnel switch based on lead zirconat-titanato material

Abstract

The invention discloses a lead zirconate titanate material-based tunneling switch which comprises a substrate, a first electrode, a lead zirconate titanate material layer, a medium thin-film layer and a second electrode; the first electrode is arranged on the surface of the substrate; the lead zirconate titanate material layer is arranged on the surface of the first electrode, far from the substrate; the medium thin-film layer is arranged on the surface of the lead zirconate titanate material layer, far from the first electrode; the medium thin-film layer is made from a material with high dielectric constant; and the second electrode is arranged on the surface of the medium thin-film layer, far from the lead zirconate titanate material layer. The lead zirconate titanate material-based tunneling switch has the advantages that the material with high dielectric constant is adopted as the medium thin-film layer, thus improving the stability and reliability of the tunneling switch and meeting the requirements put forth by industrial application in a better way.

Description

【Technical field】 [0001] The invention relates to the field of semiconductor devices, in particular to a tunnel switch based on lead zirconate titanate material. 【Background technique】 [0002] Recently, the application of ultra-thin films in multifunctional devices has received great attention in the industry, such as high-density ferroelectric random access memory, which can reduce the lateral and vertical dimensions of memory cells without reducing the remnant polarization. The calculation of the first law and the experimental observation show that after the thickness of the film is reduced to a few unit particles, strong ferroelectricity can still exist in these ultra-thin films. However, these surface effects, including intrinsically limited electrostatic shielding of metal electrodes or process problems due to defects, stress, phase contamination, and epitaxy pressure, can generate a considerable polarization field that makes individual domains in a memory cell become ...

AI Technical Summary

Problems solved by technology

However, these surface effects, including intrinsically limited electrostatic shielding of metal electrodes or process issues due to defects, stress, phase contamination, and epitaxy pressure, can generate a considerable polarization field that makes individual domains in a memory cell become 180° / 90 Zebra Domain

The reason for this change is the reduction of energy in the balance system, which is why ultra-thin film devices are difficult to apply in practice

In addition, the pulse width of the memory reading and writing process is long enough relative to the domain transition time, which can ensure the safety of the operation. Here, a reliability problem is raised, including imprinting and fatigue

[0003] Therefore, the disadvantage of the prior art is that the stability and reliability of the device cannot meet the needs of industrial applications

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