LED device

Abstract

The invention relates to a light-emitting diode device which at least comprises a buffering layer, a non-InAlGaN-doped layer, a first conductive InAlGaN layer, an active layer, a second conductive InAlGaN layer and a light transmission nitrogen-oxide structure which are stacked on a substrate in sequence; the light transmission nitrogen-oxide structure is provided with a first surface and a second surface which are opposite, wherein the first surface faces and is joined with the surface of the second conductive InAlGaN layer; and the light transmission nitrogen-oxide structure is a structure with graded refraction coefficients which decrease from the first surface direction to the second surface direction. The light-emitting diode device can reduce the light reflection effect between interfaces of different materials, the loss of the critical angle of total reflection and the like, increase the light extraction efficiency of the light-emitting diode, achieve the optimal current distribution result through controlling the current distribution by the light transmission layers, and prevent the injected current from flowing through the active layer below the metal electrode, thereby further increasing the light emitting efficiency.

Description

technical field [0001] The present invention relates to a light-emitting diode (LED) device, in particular to a device that can improve the light extraction efficiency, and can also control the current distribution through the light-transmitting layer to achieve the optimal result of the current distribution, and can also prevent the injection current from flowing through the metal. The active layer under the electrodes further improves the luminous efficacy of the light emitting diode device. Background technique [0002] see figure 1 Shown is a schematic cross-sectional view of a conventional light-emitting diode. In a general light emitting diode 100, a buffer layer 104, an undoped gallium nitride layer 106, a first conductivity type gallium nitride layer 108, an active layer 110, a second conductivity type gallium nitride layer 108, and a second conductivity type gallium nitride layer are sequentially stacked on the surface of the substrate 102. layer 112, and a light-...

AI Technical Summary

Problems solved by technology

[0005] It can be seen that above-mentioned existing light-emitting diodes obviously still have inconvenience and defects in structure and use, and need to be further improved urgently.

In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and the general products do not have a suitable structure to solve the above-mentioned problems. This is obviously related. The problem that the industry is eager to solve

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