Diode chip integrated through MOS technological structure

Abstract

A diode chip integrated through an MOS technological structure relates to a diode chip integrated by a plurality of units. A plurality of cell circuits containing eight transistors are integrated in a silicon chip of the chip in the invention; a grid (G), a source (S), a drift region and a drain (D) are arranged in each transistor; the grid (G) and the source (S) are short-connected with each other; an anode surface, namely a metal layer of aluminum, titanium, nickel and silver, and a cathode surface, namely a metal layer of aluminum, titanium, nickel and silver, are arranged on two surfaces of the silicon chip; the grid (G) is embedded into the bottom surface of the anode surface, namely the metal layer of aluminum, titanium, nickel and silver; and the drain (D) contacts with the top surface of the cathode surface, namely the metal layer of aluminum, titanium, nickel and silver. With the adoption of the MOS technological structure and according to the P channel device effect principle of MOC field effect transistor, the invention is designed into a novel grid-source short circuit structure. The diode chip has the advantages of small forward conduction voltage drop, low forward conduction power consumption and heat productivity, high current conveyance capacity, small reverse leakage current, good reverse high temperature property and higher antistatic and anti-thunder capacity.

Description

technical field [0001] The invention relates to an integrated circuit chip, in particular to a diode chip integrated with multiple units. Background technique [0002] In order to overcome the influence of solar power generation modules on the power generation output due to the spot effect caused by one group being blocked by objects, one or more bypass diodes are connected to the output end of each group of silicon photovoltaic cells to ensure the smooth flow of the module output circuit. In the early stage, ordinary rectifier diodes were used as bypass diodes, because of their large forward conduction power consumption and high temperature, which affected the reliability of power generation components; Schottky diodes were generally used as bypass diodes in existing technologies, and the metal barrier layer The forward power consumption of the Schottky diode forming the PN pole is lower than that of ordinary rectifier diodes, but its antistatic ability is relatively weak; ...

AI Technical Summary

Problems solved by technology

These requirements are not met by existing ordinary rectifier diodes and Schottky diodes

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