Metal oxide semiconductor element and manufacturing method thereof

Abstract

The invention disclosed a metal oxide semiconductor element with voltage stabilization and electrostatic discharge protection and a manufacturing method thereof, which is applied to a chip. The metal oxide semiconductor element comprises a P-type substrate, a conductor layer, a first N-type doping area, a second N-type doping area and a third N-type doping area. By using the second N-type doping area and the third N-type doping area, the metal oxide semiconductor can prevent the chip from being damaged through a welding pad by static electricity generated by human bodies or machines before the chip is installed or run; and when running, the chip can be used as a voltage stabilizing capacitor between a power end and a ground terminal. Therefore, the metal oxide semiconductor can be used efficiently without additional manufacturing of a capacitor, and can save the chip size so as to reduce the cost.

Description

technical field [0001] The invention relates to a metal oxide semiconductor element and a manufacturing method thereof, in particular to a metal oxide semiconductor field effect transistor element with voltage stabilization and electrostatic discharge protection and a manufacturing method thereof. Background technique [0002] With the continuous development and progress of semiconductor technology, the component size of complementary metal oxide semiconductor transistors has also officially entered the deep sub-micron era from the original sub-micron. Therefore, how to reduce the size of a chip without losing its function, or even increase its function, has always been the goal of the development of semiconductor technology. Generally, in an input / output pad (I / O Pad), in order to prevent electrostatic discharge (Electro Static Discharge, ESD) damage, many dummy NMOSFETs (dummy NMOSFET) or dummy NMOSFETs are commonly used. P-type metal-oxide-semiconductor field-effect tran...

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Problems solved by technology

[0004] However, the structure of the semiconductor element has a good effect on electrostatic discharge (ESD) protection, but since the NMOS field effect transistors are turned off when the chip is operating normally, it is impossible to make full use of the NMOS field effect transistor. It is a pity that the field effect transistor is a pity, and generally if you want to increase a voltage stabilizing capacitor between the power supply terminal and the ground terminal, you must make an additional capacitor, which will consume additional space, affect the size of the chip, and increase its cost

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