Large-array CMOS image sensor and manufacturing method thereof

Abstract

The invention provides a large-array CMOS image sensor, which comprises a pixel array chip and a peripheral-circuit processing chip, wherein the peripheral-circuit processing chip is positioned on the back of the pixel array chip and is connected with the pixel array chip. The invention also provides a method for manufacturing the large-array CMOS image sensor, which is characterized in that the method comprises the steps of preparing a pixel array into the pixel array chip, preparing a peripheral circuit outside the pixel array into the peripheral-circuit processing chip, placing the peripheral-circuit processing chip on the back of the pixel array chip and connecting the peripheral-circuit processing chip with the pixel array chip. The large-array CMOS image sensor and the manufacturing method thereof have the advantages of simplifying the process difficulty of the CMOS image sensor, reducing cost and improving the reliability of the image sensor.

Description

technical field [0001] The invention relates to the technical field of complementary metal oxide semiconductor (CMOS) image sensors, in particular to a large array CMOS image sensor and a manufacturing method thereof. Background technique [0002] The CMOS image sensor is composed of several units such as pixel array, row and column gating, analog signal amplification and output, and digital signal processing, and is integrated on a chip. Due to the limitation of photolithography process, large array and large size are not easy to realize, so the application is limited, making it difficult to play the advantages of CMOS image sensor. For example, X-ray chest X-ray has begun to develop from film to digital, but since the imaging area needs to adapt to the geometric size of the human body, the area of ​​the image sensor must be large enough. The existing method is to use the technology of thin film field effect transistor (TFT, ThinFilm Transistor) in liquid crystal display (...

AI Technical Summary

Problems solved by technology

[0005] 1) In the prior art, the geometric size of the circuit must fully conform to the size of the pixel array, otherwise it cannot be spliced

[0006] 2) Since the pixel array and peripheral circuits must be connected one by one, the wafer usage is large, so the cost is high

[0007] 3) Since the analog circuit and digital circuit graphics are not repeatable, the splicing process is complex, and in the process, the number of masks required will be large, so the cost is high

[0008] 4) In X-ray imaging, rays will cause damage to the circuit, making the circuit work abnormally and reducing reliability

[0009] In summary, the manufacturing process of the above-mentioned CMOS image sensor is difficult, high in cost and low in reliability.

Images