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Semi-conductor photogenic component

A technology for light-emitting components and semiconductors, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of the reduction of the light-emitting area of ​​the light-emitting diode 1 and the reduction of the luminous efficiency.

Inactive Publication Date: 2012-05-02
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if figure 1 As shown, since the light-emitting region 14 is partially etched, not only the light-emitting area of ​​the light-emitting diode 1 is greatly reduced, but also its luminous efficiency is also greatly reduced.

Method used

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  • Semi-conductor photogenic component
  • Semi-conductor photogenic component
  • Semi-conductor photogenic component

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Experimental program
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Embodiment Construction

[0020] see Figure 2A . Figure 2A It is a cross-sectional view of a semiconductor light emitting component 2 according to a preferred embodiment of the present invention.

[0021] Such as Figure 2A As shown, the semiconductor light emitting component 2 includes a substrate 20, a first conductivity type semiconductor material layer 22, a light emitting layer 24, a second conductivity type semiconductor material layer 26, a first electrode 30, a second electrode 32 and several convex structures 28.

[0022] In practical applications, the substrate 20 can be glass (SiO 2 ), silicon (Si), germanium (Ge), gallium nitride (GaN), gallium arsenide (GaAs), gallium phosphide (GaP), aluminum nitride (AlN), sapphire (sapphire), spinel (spinnel ), aluminum oxide (Al 2 o 3 ), silicon carbide (SiC), zinc oxide (ZnO), magnesium oxide (MgO), lithium aluminum dioxide (LiAlO 2 ), lithium gallium dioxide (LiGaO 2 ) or Magnesium Tetroxide (MgAl 2 o 4 ), but not limited to.

[0023] In...

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Abstract

The invention discloses a semi-conductor photogenic component which comprises a base plate, a first conductive semi-conductor material layer, a second conductive semi-conductor material layer, a photogenic layer, a first electrode, a second electrode and a plurality of raised structures. The first conductive semi-conductor material layer is formed on the base plate, has an upper surface and comprises a first area and a second area different from the first area. The first electrode is formed on the first area and the photogenic layer and the second conductive semi-conductor material layer are formed on the second area. The raised structures are formed on the upper surface of the first conductive semi-conductor material layer and between the first area and the second area. Each raised structure is made from ITO, SiO2, SiN, ZnO, polymide, BCB, SOG, InO or SnO.

Description

technical field [0001] The present invention relates to a semiconductor light-emitting device, in particular to a semiconductor light-emitting device with high light extraction efficiency. Background technique [0002] Nowadays, semiconductor light-emitting components (such as light-emitting diodes) have been widely used in applications such as button systems, mobile phone screen backlight modules, vehicle lighting systems, decorative lighting and remote control products, and semiconductor light-emitting components are widely used. . In order to ensure high functional reliability and low energy consumption as much as possible for the semiconductor light emitting device, the external quantum efficiency (external quantum efficiency) must be required for the semiconductor light emitting device. [0003] Theoretically, the external quantum efficiency of a semiconductor light-emitting device is related to its own internal quantum efficiency and light-extraction efficiency. The ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 蔡宗良王伟凯林素慧陆薏存
Owner EPISTAR CORP