Zinc oxide transparent conductive film and production method thereof
A technology of transparent conductive film and manufacturing method, applied in chemical instruments and methods, circuits, electrical components, etc., can solve the problems of inability to precisely control the quality and morphology of the film, and achieve improved LED external quantum efficiency, excellent conductivity and transparency. Features, the effect of high light transmittance
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0031] The purpose of this specific embodiment is to provide a method for manufacturing ZnO TCL, so as to manufacture a new type of ZnO TCL. The ZnO TCL produced by this method is as figure 1 As shown, it includes a ZnO nucleation layer, a ZnO main body layer and a round crown nano-columnar ZnO layer attached to one side of the GaN-LED epitaxial wafer in sequence. After testing, the ZnO TCL has low resistivity, high visible light transmittance, and the surface morphology of the film can be controlled around the photonic crystal size, and has a high degree of lattice matching with GaN; this method is applied to GaN- In the case of LEDs, the quantum efficiency outside the GaN-LED chip can be significantly improved.
[0032] In order to obtain the above-mentioned ZnO TCL, the preliminary idea of the present invention is:
[0033] Using existing industrial mass-production equipment such as MOCVD (Metal-organic Chemieal Vapor DePosition, metal organic compound chemical vapor de...
Embodiment 2
[0062] The basic steps of this embodiment are the same as those of Embodiment 1, except that the relevant parameters are not the same, and there are some differences in the relevant parameters of the final ZnO film samples. Specifically, when the nucleation layer grows, a ZnO nucleation layer with a thickness of 15nm is generated. layer.
[0063] After testing, the transmittance of 454nm visible light of the generated ZnO TCL sample is as high as 93.1%, and the resistivity is lower than 3.4E-4Ω·cm. The distance between the top of the dome and the layered film is 80nm.
Embodiment 3
[0065] The differences between this embodiment and Embodiment 1 are:
[0066] When the nucleation layer grows, the temperature is controlled at 250 degrees centigrade, the pressure is controlled at 80 torr, and the thickness of the grown ZnO nucleation layer is 22 nm.
[0067] During the growth process of the layered ZnO main layer, when doping metal Ga to grow the N-type ZnO layer, the temperature is 450 degrees Celsius, and the thickness of the generated N-type ZnO layer is 600 nm.
[0068] Then, under other conditions unchanged, the organometallic Al is introduced, and the molar weight of the organic metal Al is controlled to be 5 times higher than that of the metal Ga, and the growth is continued to 200nm.
[0069] After testing, the transmittance of the obtained ZnO TCL sample to 468nm visible light is as high as 92.1%, while the resistivity is lower than 7.4E-4Ω cm. The surface morphology presents a self-assembled circular crown island structure, and the span of the circ...
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| electrical resistivity | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More