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Semiconductor light emitting assembly

A technology of light-emitting components and semiconductors, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., and can solve the problems of reduced luminous efficiency and reduced light-emitting area of ​​light-emitting diodes 1, etc.

Inactive Publication Date: 2012-08-29
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if figure 1 As shown, since the light-emitting region 14 is partially etched, not only the light-emitting area of ​​the light-emitting diode 1 is greatly reduced, but also its luminous efficiency is also greatly reduced.

Method used

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  • Semiconductor light emitting assembly
  • Semiconductor light emitting assembly
  • Semiconductor light emitting assembly

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] see Figure 2A . Figure 2A It is a cross-sectional view of a semiconductor light emitting component 2 according to a preferred embodiment of the present invention.

[0020] Such as Figure 2A As shown, the semiconductor light emitting component 2 includes a substrate 20, a first conductivity type semiconductor material layer 22, a light emitting layer 24, a second conductivity type semiconductor material layer 26, a first electrode 30, a second electrode 32 and several convex structures 28.

[0021] In practical applications, the substrate 20 can be glass (SiO 2 ), silicon (Si), germanium (Ge), gallium nitride (GaN), gallium arsenide (GaAs), gallium phosphide (GaP), aluminum nitride (AlN), sapphire (sapphire), spinel (spinnel ), aluminum oxide (Al 2 o 3 ), silicon carbide (SiC), zinc oxide (ZnO), magnesium oxide (MgO), lithium aluminum dioxide (LiAlO 2 ), lithium gallium dioxide (LiGaO 2 ) or Magnesium Tetroxide (MgAl 2 o 4 ), but not limited to.

[0022] In...

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PUM

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Abstract

The invention discloses a semiconductor light emitting assembly comprising a base plate, a first conductive semiconductor material layer, a second conductive semiconductor material layer, a light emitting layer, a first electrode, a second electrode and a plurality of convex structures. The first conductive semiconductor material layer is disposed on the base plate and is provided with an upper surface including a first region and a second region different from the first region. The first electrode is disposed on the first region, and the light-emitting layer and the second conductive semiconductor material layer are disposed on the second region. The plurality of convex structures are disposed on the upper surface of the first conductive semiconductor material layer and arranged between the first region and the second region. At least one pit is disposed on the lateral wall of each convex structure. Or the lateral wall of each convex structure is approximately provided with an arc-shaped outline.

Description

technical field [0001] The present invention relates to a semiconductor light-emitting device, in particular to a semiconductor light-emitting device with high light extraction efficiency. Background technique [0002] Nowadays, semiconductor light-emitting components (such as light-emitting diodes) have been widely used in applications such as button systems, mobile phone screen backlight modules, vehicle lighting systems, decorative lighting and remote control products, and semiconductor light-emitting components are widely used. . In order to ensure high functional reliability and low energy consumption as much as possible for the semiconductor light emitting device, the external quantum efficiency (external quantum efficiency) must be required for the semiconductor light emitting device. [0003] Theoretically, the external quantum efficiency of a semiconductor light-emitting device is related to its own internal quantum efficiency and light-extraction efficiency. The ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 蔡宗良王伟凯林素慧陆薏存
Owner EPISTAR CORP