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Light emitting element and manufacturing method thereof

A light-emitting element and patterned light technology, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve the problems of reduced current spreading effect and achieve good current spreading effect and high light extraction efficiency

Active Publication Date: 2015-11-25
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A current spreading layer will be formed on the contact layer to increase the effect of current spreading, but if the surface of the current spreading layer is uneven, the effect of current spreading will be reduced

Method used

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  • Light emitting element and manufacturing method thereof
  • Light emitting element and manufacturing method thereof
  • Light emitting element and manufacturing method thereof

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Experimental program
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Embodiment Construction

[0034] The following fit Figure 1 ~ Figure 3 The process of the light-emitting element of the first embodiment of the present invention will be described. First, please refer to figure 1 , including a growth substrate 21 whose material can be, for example, gallium arsenide, silicon, silicon carbide, sapphire, indium phosphide, gallium phosphide, aluminum nitride, or gallium nitride. Next, a semiconductor epitaxial structure 22 is formed on the growth substrate 21 . The semiconductor epitaxial structure 22 is formed by an epitaxial process, such as metal organic vapor deposition epitaxy (MOCVD), liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE). The material includes one or more substances selected from the group consisting of gallium, aluminum, indium, arsenic, phosphorus, nitrogen and silicon. The semiconductor epitaxial structure 22 at least includes a first electrical type semiconductor layer 23 , an active layer 24 , and a second electrical type semiconductor...

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PUM

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Abstract

The invention discloses a light-emitting element and a manufacture method thereof. The light-emitting element comprises a contact layer and a current spreading layer, wherein the local area of the contact layer has a roughening structure, and the local area has a flat structure; the current spreading layer is positioned on the contact layer, the local area of the current spreading layer has a roughening structure, and the local area has a flat structure so that the roughening structure area of the current spreading layer is completely stacked on the roughening structure area of the contact layer approximately. The light-emitting element of the invention has high light extraction efficiency and good current spreading effect.

Description

technical field [0001] The present invention relates to a light-emitting element and its manufacturing method, in particular to a light-emitting diode structure with good current spreading effect and high light extraction efficiency and its manufacturing method. Background technique [0002] Because light-emitting diodes have good photoelectric characteristics such as low power consumption, low heat dissipation, long operating life, impact resistance, small size, fast response speed, and can emit color light with stable wavelengths, they are often used in home appliances, indicator lights of instruments, The application light source of optoelectronic products, and the field of optoelectronic communication, etc. [0003] In a general light emitting diode structure, in order to have a lower contact resistance between the electrode and the underlying semiconductor structure, a contact layer is formed therebetween. When an electrode is formed over the contact layer, the interfa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 杨鸿志沈豫俊刘欣茂
Owner EPISTAR CORP