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Method for preparing ZnO nanorods array

A technology of nanorod array and seed layer is applied in the field of preparation of ZnO nanorod array, which can solve the problems of uneven distribution and large difference in size of ZnO nanorods, and achieve the effect of improving product quality and shortening preparation time.

Inactive Publication Date: 2009-10-07
ZHEJIANG UNIV
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Problems solved by technology

In the process of preparing ZnO nanorod arrays by the existing hydrothermal method technology, since the surface of the ZnO seed layer is not hydrophilic, bubbles are generated on the surface of the ZnO seed layer, so the mixed solution used for the reaction is unevenly distributed on the ZnO seed layer, The size of the obtained ZnO nanorods is quite different and the distribution is not uniform

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  • Method for preparing ZnO nanorods array

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Embodiment Construction

[0010] The preparation method of the ZnO nanorod array of the present invention is firstly the preparation of the dielectric layer. The silicon wafer selected as the substrate is cleaned and placed in a high-temperature furnace for thermal oxidation. After thermal oxidation at a temperature of 1140 ° C for 40 minutes, A 50nm thick silicon dioxide layer is grown on the surface of the substrate.

[0011] Then a 100nm-thick Zn film was deposited on the dielectric layer of the silicon substrate by means of DC magnetron sputtering, before which the substrate was cleaned by plasma bombardment. When depositing Zn film, the purity of the zinc target is 99.999%, the diameter of the zinc target and the distance between the target and the substrate are 6cm, and the background vacuum is 1.6×10-4Pa. High-purity argon is introduced through a flow control system. The working pressure in sputtering was kept at 1.0 Pa. The sputtering power was 50W, and the time lasted 20min. Under atmospher...

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Abstract

The invention discloses a method for preparing ZnO nanorods array, the method first putting washed silicon slice into high-temperature furnace for oxidation, after generation of silicon dioxide medium layer, a nano ZnO membrane is deposition formed on surface of the silicon dioxide medium layer, also called ZnO seed-layer, the ZnO seed-layer is immersed in mixed solution of Zinc nitrate and hexamethylene-tetramine in same concentration and eaual volumne, reacting in a sealed reactor and pulling out and washing by deionized water completely. In the method of preparing ZnO nanorods array, using UV irradiation to make surface wettability of the ZnO seed layer transfer from hydrophobicity to hydrophilia, then the mixed solution on the ZnO seed layer can distribute uniformly in following prepartion process.

Description

technical field [0001] The invention relates to a preparation method of a ZnO nanorod array. Background technique [0002] ZnO is a kind of II-VI wide bandgap metal oxide semiconductor material that has attracted increasing attention and attention, and has many unique physical and chemical properties. It is used in different fields and has been widely studied, including surface acoustic wave devices, photonic crystals, light-emitting diodes, photodetectors, light-modulating waveguides, varactor devices, gas sensors, etc. Among them, highly oriented ZnO nanorod arrays are an important research hotspot. People have used the unique characteristics of this structural material to realize the preparation of nano-lasers, the realization of field emission functions, the testing of piezoelectric devices and sensors, etc. [0003] There are many technical methods for preparing ZnO nanorod arrays. The basic preparation process includes selecting a substrate, generating a dielectric l...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/50
Inventor 王平宗小林吴晓玲
Owner ZHEJIANG UNIV
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