Check patentability & draft patents in minutes with Patsnap Eureka AI!

Method and device for constructing a high-speed solid state memory disc by using higher-capacity DRAM to join in flash memory medium management

A technology of solid-state storage and media management, applied in static memory, information storage, memory systems, etc., can solve the problems of large quantity, application limitation, not allowed to participate in calculation and calibration of bad block area management, etc., to achieve enhanced management Ability, fast response, high hit rate effect

Active Publication Date: 2009-10-07
SHENZHEN CITY GCAI ELECTRONICS
View PDF0 Cites 38 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the use of Memory is I / O in continuous space, it is not allowed to participate in the calculation and calibration of bad block area management like hard disks. Therefore, the current application of this B-level product is limited, because it cannot be used effectively like Flash. A certain proportion can effectively complete a certain proportion of cost amortization. At present, DRAM manufacturers have a large number of goods and are still accumulating

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and device for constructing a high-speed solid state memory disc by using higher-capacity DRAM to join in flash memory medium management
  • Method and device for constructing a high-speed solid state memory disc by using higher-capacity DRAM to join in flash memory medium management
  • Method and device for constructing a high-speed solid state memory disc by using higher-capacity DRAM to join in flash memory medium management

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] Below, further elaborate the present invention in conjunction with the preferred embodiment shown in accompanying drawing

[0045] see figure 1 , the present invention uses dynamic random access memory DRAM to compound to Flash management and builds the method for solid-state storage hard disk, implementation steps:

[0046] A. flash memory medium module 37 and interface circuit module 31 are set;

[0047] B. the dynamic random access memory (DRAM) module 35 of larger capacity is set, and a part of its storage space is used as data storage together with the flash memory medium module 37;

[0048] C. DRAM is set to participate in the management of the hard disk controller 39 of the flash medium;

[0049] D. double backup power management module 38 is set, for the data in the DRAM module 35 is written back in the described flash memory medium module 37 to provide protective back-up power supply when shutting down or losing power;

[0050] E. construct the super high-s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A high-speed solid state memory disc device constructed by using a higher-capacity DRAM to join in flash memory medium management is served as the memory device of a computer or a server. The high-speed solid state memory disc device comprises a flash memory medium module (37) and an interface circuit module (31), and particularly comprises higher-capacity dynamic random memory (DRAM) module (35), a DRAM hard disc controller (39) joining in managing flash memory medium, and a double auxiliary electricity management module (38) needed by the DRAM module (35). The DRAM hard disc controller (39) joining in managing the flash memory medium is connected with the DRAM module (35) and the flash memory medium module (37) respectively by address / data buses (32, 33) and connected with the interface circuit module (31) by a composite bus; and the double auxiliary electricity management module (38) is in electric connection with the DRAM hard disc controller (39) joining in managing flash memory medium. The high-speed solid state memory disc device is characterized in that Flash write back is lowered down to the greatest extent and the response speed of the constructed solid state memory disc (SSD) to systems is improved greatly.

Description

technical field [0001] The present invention relates to an erasable programmable read-only memory, in particular to access, addressing or distribution in a memory system or architecture, and in particular to a method for constructing a solid-state storage hard disk by combining DRAM with Flash management and devices. Background technique [0002] With the continuous development of central processing unit (CPU) speed and memory (Memory) speed in the computer field, traditional mechanical hard disks (hard disk drives are hard disk drives in English, used to refer to such hard disks, hereinafter referred to as: HHD) are becoming more and more popular. It has become the bottleneck of data input / output (I / O). Although the continuous improvement of hard disk cache (Cache) technology and interface (PATA, SATA, etc.) technology has greatly improved the speed of HHD, it still cannot meet the further requirements of CPU and bus. Increased I / O speed requirements. [0003] The rapid d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G11C7/10G11C29/00G11C5/14G06F12/02
CPCG06F3/0679G06F3/0613G06F12/0802G06F3/0656G06F2212/2022
Inventor 王树锋
Owner SHENZHEN CITY GCAI ELECTRONICS
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More