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Gallium nitride crystal and method of making same

A single crystal, crystal plane technology, applied in the field of gallium nitride crystal and its preparation, can solve the problems of not teaching seed crystal growth, not disclosing higher pressure range, not proving GaN crystal, etc.

Inactive Publication Date: 2009-11-04
MOMENTIVE PERFORMANCE MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As described by Jacobs and Schmidt in "High Pressure Ammonolysis in Solid-State Chemistry", Curr. Topics Mater. Sci. 8, ed. by E Kaldis (North-Holland, 1982), when using NH 3 In operation, the pressure of standard pressure vessels is limited to about 5 to 6 kbar, limiting the maximum temperature and reaction rate, and thus the quality of crystals.
Thus, Demazeau does not disclose methods for reaching higher pressure ranges, and does not demonstrate that GaN crystals larger than 1 mm in size
Also, Demazeau does not teach the use of temperature gradient profiles to optimize seed growth

Method used

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  • Gallium nitride crystal and method of making same
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  • Gallium nitride crystal and method of making same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0075] A small hole was drilled in a GaN seed weighing 19.7 mg with a high-power laser. The seed was suspended with a 0.13-mm silver wire from a silver baffle with an open area of ​​35%, and together with 0.10 g of NH 4 The F mineralizer was placed in the lower half of a 0.5 inch diameter silver airtight container. 0.74 g of polycrystalline GaN source material was placed in the upper half of the closed vessel. The closed container was then enclosed within a filler / seal assembly along with a 0.583 inch diameter steel ring. Transfer the closed container and filler / seal assembly to a gas manifold and fill with 0.99 g of ammonia. Next, a stopper is inserted into the open top of the closed container so that a cold joint is formed between the silver closed container and the silver stopper, and a steel ring surrounds the stopper and provides reinforcement. The closed container was removed from the filler / seal assembly and inserted into the zero-stroke HPHT device. The chamber was...

Embodiment 2

[0077] A GaN seed weighing 12.6 mg obtained from a previous experiment was suspended from a silver baffle with an open area of ​​35% via a laser-drilled hole via a 0.13-mm silver wire and placed in a 0.5-inch diameter silver-tight container lower half of the . 0.10gNH 4 F mineralizer and 1.09g of polycrystalline GaN source material were placed in the upper half of the closed container. The closed container was then enclosed within a filler / seal assembly along with a 0.583 inch diameter steel ring. Transfer the closed container and filler / seal assembly to a gas manifold and fill with 0.95 g ammonia. Next, a stopper is inserted into the open top of the closed container so that a cold joint is formed between the silver closed container and the silver stopper, and a steel ring surrounds the stopper and provides reinforcement. The closed container is then removed from the filler / seal assembly and inserted into the zero-stroke HPHT device. The chamber was heated at a rate of abo...

Embodiment 3

[0079] Two GaN seeds weighing 48.4 mg and 36.6 mg obtained from previous experiments were suspended by a laser-drilled hole via a 0.13-mm silver wire from a silver baffle with an open area of ​​35% and placed on a 0.5-in. diameter of the lower half of the silver airtight container. 0.10g of NH 4F mineralizer and 1.03 g of polycrystalline GaN source material were placed in the upper half of the closed container. The closed container was then enclosed within a filler / seal assembly along with a 0.583 inch diameter steel ring. Transfer the closed container and filler / seal assembly to the gas manifold and fill with 1.08 g of ammonia. Next, a stopper is inserted into the open top of the closed container so that a cold joint is formed between the silver closed container and the silver stopper, and a steel ring surrounds the stopper and provides reinforcement. The closed container is then removed from the filler / seal assembly and inserted into the zero-stroke HPHT device. The cham...

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Abstract

There is provided a GaN single crystal at least about 2.75 millimeters in diameter, with a dislocation density less than about 10cm, and having substantially no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.

Description

[0001] Cross References to Related Applications [0002] This application is a continuation-in-part of application serial number 11 / 376,575 filed on March 15, 2006 and US Patent 7,098,487 approved on August 29, 2006. This application claims the above priority and benefits thereof, the disclosures of which are incorporated herein by reference. [0003] Statement on Federally Funded Research and Development [0004] The United States Government may have certain rights in this invention pursuant to Cooperative Agreement No. 70NANB9H3020, granted by the National Institute of Standards and Technology, United States Department of Commerce. technical field [0005] The present invention generally relates to high-quality gallium nitride single crystal and its preparation method. Background technique [0006] Gallium Nitride (GaN) based optoelectronic and electronic devices are of great commercial importance. However, the quality and reliability of these devices are compromised du...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B7/10C30B9/12C30B29/40
CPCC30B7/10C30B29/406
Inventor 马克·飞利浦·德艾芙琳东-斯尔·帕克史蒂芬·弗兰西斯·勒伯夫拉里·波顿·罗兰克里斯蒂·简·纳拉恩慧聪·洪彼得·麦卡·山特维克
Owner MOMENTIVE PERFORMANCE MATERIALS INC