Vertical pulling silicon single crystal growing furnace with water-cooling jacket

Abstract

The invention relates to a device for preparing silicon single crystal and aims at providing a vertical pulling silicon single crystal growing furnace with a water-cooling jacket. The growing furnace comprises a heater, a quartz crucible and a heat insulating device. The above of the quartz crucible is provided with a thermal shielding device which guards a single crystal rod lifting region; the tube-shaped water-cooling jacket is arranged between the thermal shielding device and the single crystal rod lifting region; and the water-cooling jacket is a hollow jacket device, the interior of which is a channel for cooling water to flow and provided with a water inlet pipe and a water outlet pipe. The newly grown high temperature part of the single crystal rod is cooled by the water-cooling jacket, and large temperature difference ensures the single crystal rod to dissipate heat rapidly, and the growing speed of the single crystal rod can increase nearly one time. As the heat on the growing interface of the single crystal rod can be led away by the single crystal rod, the power consumption of the heater can be reduced greatly and the micro defect of the crystal can be reduced. If the temperature of the used cooling water is lower, the cooling effect is better.

Description

technical field [0001] The invention relates to a silicon single crystal preparation device, in particular to a Czochralski type silicon single crystal growth furnace with a water-cooled jacket. Background technique [0002] The Czochralski method (Czochralski, CZ method) commonly used now is to put the raw polysilicon crystal block into a quartz crucible, heat and melt it in a low-pressure, continuous argon flow-protected single crystal furnace, and then put a diameter Only 10 mm rod-shaped seeds (seed crystals) are immersed in the melt. At a suitable temperature, the silicon atoms in the melt will form regular crystals on the solid-liquid interface along the silicon atom arrangement structure of the seed crystal, becoming a single crystal. Slightly rotate the seed crystal upwards, and the silicon atoms in the melt will continue to crystallize on the previously formed single crystal, and continue its regular atomic arrangement structure. If the entire crystallization envi...

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Problems solved by technology

However, even with the addition of a heat shield device, the cooling effect of the single crystal rod is still not ideal, and the lifting speed of the single crystal rod should not be too fast, otherwise it will cause defects in the crystal

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