Unlock instant, AI-driven research and patent intelligence for your innovation.

Grating diffraction external cavity semiconductor laser

A semiconductor and laser technology, applied in the field of grating grazing diffraction external cavity semiconductor lasers, can solve problems such as unfavorable mechanical structure design, and achieve the effect of easy design

Inactive Publication Date: 2012-07-04
NAT INST OF METROLOGY CHINA
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the Littman structure, the feedback mirror M and the synchronous tuning rotation center P are respectively located on both sides of the laser beam emitted by the semiconductor laser tube, which is unfavorable for the mechanical structure design of synchronous tuning

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Grating diffraction external cavity semiconductor laser
  • Grating diffraction external cavity semiconductor laser
  • Grating diffraction external cavity semiconductor laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The present invention will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are illustrated.

[0028] The technical scheme of the present invention is as image 3 and Figure 4 As shown, the grating grazing diffraction external cavity semiconductor laser includes: a semiconductor laser tube 1 , a collimator lens 3 , a grating 12 and a mirror 5 . Different from the Littman structure, the incident angle θi of the laser light emitted by the semiconductor laser tube 1 incident on the grating 12 is smaller than the diffraction angle θd of the grating. Through the above structure, the diffraction spot of the grating 12 can be compressed in the meridional direction, and its size is smaller than the incident spot size, and the mirror 5 and the synchronous tuning rotation center P are more easily selected on the same side where the semiconductor laser tube emits the laser beam. The frequency select...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a grating diffraction external cavity semiconductor laser comprising a semiconductor laser diode (1), a collimating lens (3), a grating (12) and a reflecting mirror (5). The arrangement of all the components in the semiconductor laser makes the incident angle theta i on the grating by the laser light emitted from the semiconductor laser diode (1) smaller than the diffraction angle theta d of the first-level diffraction light of the grating (12). The grating diffraction external cavity semiconductor laser makes the luminous spot of the diffraction light smaller than thatof the incident light, and can realize luminous spot compression in the meridian direction.

Description

technical field [0001] The invention relates to semiconductor laser technology, in particular to a grating grazing diffraction external cavity semiconductor laser. Background technique [0002] The grating-feedback external-cavity semiconductor laser uses the wavelength or frequency selection function of the diffraction grating to realize the line width narrowing and spectral line selection of ordinary laser diodes. Depend on figure 1 and figure 2 As shown, the incident angle of the laser beam emitted by the semiconductor laser tube (LD) 1 to the diffraction grating (Gt) 12 is θi, and after the diffraction grating 12 diffracts the incident beam, the diffraction angle of the first-order diffracted light generated is θd. According to the classification of the relationship between θi and θd, the existing grating external cavity semiconductor lasers can be divided into two categories: [0003] The first type: θi>θd, the incident light is close to grazing incidence. The i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/14
Inventor 臧二军曹建平李烨方占军
Owner NAT INST OF METROLOGY CHINA