Method and technology for preparing gong-shaped ultra-thin wafers
An ultra-thin, wafer-based technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as high price, complex refining process, and scarce raw materials
Active Publication Date: 2009-12-02
郑州光力瑞弘电子科技有限公司 +1
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Problems solved by technology
These raw materials are scarce, the process of refining and processing is complicated, and the price is expensive.
Method used
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[0015] 1. The ingot is processed by wire cutting, double-sided grinding and other processes to prepare ultra-thin wafers with a thickness of 150 microns to 200 microns.
[0016] 2. Select suitable materials to prepare the wafer support ring.
[0017] 3. Put the wafer support ring on the outer edge of the vacuum chuck with a slight distance from the outer edge of the vacuum chuck, and its surface height is equal to the surface of the vacuum chuck. Then place the ultra-thin wafer on the vacuum chuck and absorb it by vacuum (to overcome the possible warping and deformation of the ultra-thin wafer), so that the ultra-thin wafer is fixed on the vacuum chuck flatly. see attached Figure 4 (Cross-sectional view of vacuum chuck holding wafer and support ring)
[0018] 4. Throw a laser beam whose spot diameter matches the width of the support ring from above the wafer for heating. The focal point of the laser beam penetrates the wafer and focuses on the contact surface between the ul...
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Abstract
The invention discloses a method and related technology for preparing brand-new advanced semiconductor wafers and aims to save precious semiconductor raw materials. The key points of the method comprise: 1, selecting proper materials for preparing supporting rings of the wafers, wherein the supporting rings have high mechanical strength, bending strength, surface tension, chemical inertness and excellent compatibility with semiconductor materials, and the supporting rings for the wafer made of different materials (Si, GaAs, InP, Ge and the like) are prepared from materials having high adaptability to and compatibility with the materials of the wafers; 2, preparing the supporting rings having the same size and contraposition-edge shape as the wafers according to the size and the contraposition-edge shape of the wafers; and 3, welding the ultra-thin chips on the supporting rings by using laser fusion technology to prepare the ultra-thin wafers. The ultra-thin wafers prepared by the method and the technology can withstand various pressure, impact, high temperature technical processing process and other processes during the manufacturing and processing of large-scale integrated circuits due to the excellent mechanical strength, bending strength, surface tension and other physical properties provided by the supporting rings and are excellent original wafers for semiconductor integrated circuits.
Description
technical field [0001] The present invention relates to the wafer preparation method and technology in the manufacture of semiconductor components and ultra-large-scale integrated circuits, mainly applied to (but not limited to) silicon (Si), gallium arsenide (GaAs), germanium (Ge), phosphide Wafer preparation of semiconductor materials such as gallium (GaP) and indium phosphide (InP) is a new preparation method and technology for forming ultra-thin wafers. Background technique [0002] The current wafer (Wafer) preparation technology has a great waste of semiconductor materials and a waste of processing technology in integrated circuit packaging. As we all know, semiconductor components and very large-scale integrated circuits (VLSI) are only manufactured within the thickness of tens of microns on the surface of the wafer, but because of the mechanical strength, bending strength, There are high requirements for physical properties such as surface tension, so the wafers hav...
Claims
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Login to View More IPC IPC(8): H01L21/02H01L21/08
Inventor 张健欣
Owner 郑州光力瑞弘电子科技有限公司