Effective electrostatic discharge protection circuit

Abstract

The invention relates to an effective electrostatic discharge protection circuit; electrostatic discharge (ESD) is the most important reliability problem in the current integrated circuits. Along with the development of manufacturing technology of the integrated circuits, characteristic dimension is reduced continuously, the anti-static electricity capacity is weaker, however, under the micro-electronic manufacturing and using environment, the chance that devices suffer from ESD is more, and the effect of the ESD on the integrated circuits is greater, and ESD damage is an attention focus on the new process. The invention starts from the basic starting point, the limit of the traditional simple ESD protective circuit is broken through, and the ESD protective circuit is improved on the structure with the consideration of domain layout and design rules, but the process flows are basically consistent with the regular BICMOS processes, thereby ensuring good ESD protecting capacity of the integrated circuits and being capable of not leading the process to be complicated, improving the reliability of the circuit without increasing cost and improving the competitiveness of the circuit.

Description

technical field [0001] The invention relates to an ESD protection circuit for providing effective ESD electrostatic protection inside an integrated circuit, and belongs to the technical field of semiconductor manufacturing. Background technique [0002] Electrostatic Discharge (ESD) is one of the most important reliability issues in today's integrated circuits. With the development of integrated circuit manufacturing technology, the feature size is continuously shrinking, and the antistatic ability is getting weaker and weaker. However, in the environment of microelectronics manufacturing and use, there are more and more opportunities for devices to suffer from ESD, which makes ESD harmful to the environment. The influence of integrated circuits is also increasing, and ESD damage has become the focus of attention in new processes. [0003] The ESD phenomenon can mainly cause the following damage to electronic devices: in semiconductor devices, the oxide film is ruptured due...

AI Technical Summary

Problems solved by technology

The protection circuit formed by the diode has a simple structure and occupies almost no area (a diode can be formed through a parasitic PN junction). Its disadvantage is that the parameters of the diode are limited by the process parameters, the reverse breakdown voltage cannot be controlled and when the power supply When the forward pulse of ESD relative to ground is applied to VDD, the reverse breakdown of the diode is in an unsafe working mode, and thermal breakdown is prone to occur, resulting in short circuit or open circuit of the diode and causing chip failure.

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