Method for manufacturing metal connecting line

Abstract

The invention discloses a method for manufacturing a metal connecting line, comprising the following steps: providing a semiconductor substrate; forming a barrier layer on the substrate; thermally processing the barrier layer; forming a metal layer on the barrier layer; forming an insulation layer and an anti-reflection layer on the metal layer; coating a photoresist layer on the anti-reflection layer; patterning the photoresist layer to define a lead pattern; and etching the anti-reflection layer, the metal layer and the barrier layer in sequence to form a lead structure. In the manufacturingmethod, a step of thermal treatment is added between the step of forming the barrier layer on the semiconductor substrate and the step of forming the metal layer so as to have an annealing effect onthe barrier layer, the barrier layer is recrystallized for hardening, pressure stress of metal lattice of the metal layer formed on the barrier layer sequentially caused by thermal treatment such as annealing, and the like is reduced, and embossment or projection of the metal layer can not occur, thereby ensuring the electronic stability of the manufactured devices and improving the yield of products.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing metal wiring. Background technique [0002] The manufacture of semiconductor integrated circuits is an extremely complex process, the purpose of which is to reduce the various electronic components and circuits required for a specific circuit on a small area substrate. In recent years, with the development of semiconductor integrated circuit manufacturing technology, the number of components contained in the chip has been increasing, and the size of the components has been shrinking with the increase in integration. The surface of the chip is gradually unable to provide enough area to make the required Inner wires. In order to meet the new requirements, the design of metal conduction with more than two layers has gradually become the method that many integrated circuits must adopt, especially some products with more complex functions, such as...

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Problems solved by technology

[0011] The present invention aims to solve the problem of small bumps or peaks appearing on the metal layer due to the difference in expansion coefficients between the metal layer and the semiconductor substrate during heat treatment such as annealing in the process of manufacturing semiconductor metal wiring in the prior art, and then The resulting metal interconnection wire has low performance, poor reliability and other technical problems

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